Interface State Density in Atomic Layer Deposited SiO2/β-Ga2O3 (2-01) MOSCAPs

Ke Zeng; Ye Jia; Uttam Singisetti

doi:10.1109/LED.2016.2570521

Interface State Density in Atomic Layer Deposited SiO₂/β-Ga₂O₃ (2-01) MOSCAPs

Ke Zeng
, Ye Jia
, Uttam Singisetti

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

119 Scopus citations

Abstract

The interface state density (D_it) at the interface between β-Ga₂O₃ (2-01 ) and atomic layer deposited (ALD) SiO₂ dielectric is extracted using Terman method and conductance method. The effect of the different surface treatments on the extracted D_it was also studied. It is observed that the extracted D_it of 6 × 10¹¹ cm^-2eV^-1 for the sample with no surface treatment is lower than hydrofluoric and hydrochloric acid treated samples. Low D_it sample shows narrow peak in the conductance method, suggesting a smooth interface. The extracted low D_it makes ALD SiO₂ an attractive candidate for future Ga₂O₃ power devices.

Original language	English
Article number	7471471
Pages (from-to)	906-909
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	7
DOIs	https://doi.org/10.1109/LED.2016.2570521
State	Published - Jul 2016

Keywords

ALD silicon dioxide
conductance method
Gallium oxide
interface state
Terman method

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10.1109/LED.2016.2570521

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title = "Interface State Density in Atomic Layer Deposited SiO2/β-Ga2O3 (2-01) MOSCAPs",

abstract = "The interface state density (Dit) at the interface between β-Ga2O3 (2-01 ) and atomic layer deposited (ALD) SiO2 dielectric is extracted using Terman method and conductance method. The effect of the different surface treatments on the extracted Dit was also studied. It is observed that the extracted Dit of 6 × 1011 cm-2eV-1 for the sample with no surface treatment is lower than hydrofluoric and hydrochloric acid treated samples. Low Dit sample shows narrow peak in the conductance method, suggesting a smooth interface. The extracted low Dit makes ALD SiO2 an attractive candidate for future Ga2O3 power devices.",

keywords = "ALD silicon dioxide, conductance method, Gallium oxide, interface state, Terman method",

author = "Ke Zeng and Ye Jia and Uttam Singisetti",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

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AU - Zeng, Ke

AU - Jia, Ye

AU - Singisetti, Uttam

PY - 2016/7

Y1 - 2016/7

N2 - The interface state density (Dit) at the interface between β-Ga2O3 (2-01 ) and atomic layer deposited (ALD) SiO2 dielectric is extracted using Terman method and conductance method. The effect of the different surface treatments on the extracted Dit was also studied. It is observed that the extracted Dit of 6 × 1011 cm-2eV-1 for the sample with no surface treatment is lower than hydrofluoric and hydrochloric acid treated samples. Low Dit sample shows narrow peak in the conductance method, suggesting a smooth interface. The extracted low Dit makes ALD SiO2 an attractive candidate for future Ga2O3 power devices.

AB - The interface state density (Dit) at the interface between β-Ga2O3 (2-01 ) and atomic layer deposited (ALD) SiO2 dielectric is extracted using Terman method and conductance method. The effect of the different surface treatments on the extracted Dit was also studied. It is observed that the extracted Dit of 6 × 1011 cm-2eV-1 for the sample with no surface treatment is lower than hydrofluoric and hydrochloric acid treated samples. Low Dit sample shows narrow peak in the conductance method, suggesting a smooth interface. The extracted low Dit makes ALD SiO2 an attractive candidate for future Ga2O3 power devices.

KW - ALD silicon dioxide

KW - conductance method

KW - Gallium oxide

KW - interface state

KW - Terman method

UR - https://www.scopus.com/pages/publications/84976884458

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DO - 10.1109/LED.2016.2570521

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SN - 0741-3106

VL - 37

SP - 906

EP - 909

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 7471471

ER -

Interface State Density in Atomic Layer Deposited SiO₂/β-Ga₂O₃ (2-01) MOSCAPs

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