Abstract
High barrier height metal-insulator (oxide)-semiconductor diodes were fabricated using Au or Yb on p-InP, and Au or Pd on n-InP. Au oxide is unnecessary for p-InP whereas a chemically-grown oxide on n-InP produces a barrier height as high as 0.859eV. Ellipsometry and ESCA were used to determine oxide thickness of about 40A and a mixed composition. Current- voltage-temperature data reveal different conduction mechanisms depending on structure and temperature. Certain conditions suggest a surface state recombination due to a 0.4eV level above the valence band. Operation under steady forward or reverse bias stabilizes diodes with thermal oxide on n-InP but shows some degradation with chemical oxides.
| Original language | English |
|---|---|
| Pages (from-to) | 217-223 |
| Number of pages | 7 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 1144 |
| DOIs | |
| State | Published - 1989 |
| Event | 1st International Conference on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices 1989 - Norman, United States Duration: Mar 20 1989 → Mar 22 1989 |
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