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Interface-enhanced defect absorption between epitaxial anatase TiO 2 film and single crystal SrTiO3

  • M. J. Zhuo
  • , E. G. Fu
  • , L. Yan
  • , Y. Q. Wang
  • , Y. Y. Zhang
  • , R. M. Dickerson
  • , B. P. Uberuaga
  • , A. Misra
  • , M. Nastasi
  • , Q. X. Jia
  • Los Alamos National Laboratory
  • Los Alamos National Laboratory Materials Science and Technology Division

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

The microstructural evolution of Ne-ion-irradiated anatase TiO 2/SrTiO3 films was investigated. A defect denuded layer formed in the TiO2 film near the TiO2/SrTiO3 interface after irradiation. The accumulation of defects at the TiO 2/SrTiO3 interface led to the formation of a continuous interfacial amorphous layer on SrTiO3. Both observations are attributed to the interaction of defects with the interface. Present results reveal that a hetero-epitaxial interface between two different oxides can act as an effective sink to absorb irradiation-induced defects.

Original languageEnglish
Pages (from-to)807-810
Number of pages4
JournalScripta Materialia
Volume65
Issue number9
DOIs
StatePublished - Nov 2011

Keywords

  • Anatase TiO film
  • Interface structure
  • Ion-beam processing
  • Irradiation effect
  • Transmission electron microscopy (TEM)

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