Interface-charged impurity scattering in semiconductor MOSFETs and MODFETs: Temperature-dependent resistivity and 2D `metallic' behavior

S. Das Sarma; E. H. Hwang; Igor Žutić

doi:10.1006/spmi.2000.0877

Interface-charged impurity scattering in semiconductor MOSFETs and MODFETs: Temperature-dependent resistivity and 2D `metallic' behavior

S. Das Sarma
, E. H. Hwang
, Igor Žutić

Physics

University of Maryland, College Park

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

The temperature-dependent resistivity of the two-dimensional (2D) systems in MOSFETs and MODFETs in the `metallic' phase is investigated using the Drude-Boltzmann transport theory. The strong temperature dependence of resistivity arises from the temperature-dependent screening and a low Fermi temperature. The charged impurity scattering, carrier binding, and quantum crossover are analyzed.

Original language	English
Pages (from-to)	421-424
Number of pages	4
Journal	Superlattices and Microstructures
Volume	27
Issue number	5
DOIs	https://doi.org/10.1006/spmi.2000.0877
State	Published - May 2000
Event	3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA Duration: Dec 6 1999 → Dec 10 1999

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10.1006/spmi.2000.0877

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@article{15f1b71151ea46ecb6073b89e14a482e,

title = "Interface-charged impurity scattering in semiconductor MOSFETs and MODFETs: Temperature-dependent resistivity and 2D `metallic' behavior",

abstract = "The temperature-dependent resistivity of the two-dimensional (2D) systems in MOSFETs and MODFETs in the `metallic' phase is investigated using the Drude-Boltzmann transport theory. The strong temperature dependence of resistivity arises from the temperature-dependent screening and a low Fermi temperature. The charged impurity scattering, carrier binding, and quantum crossover are analyzed.",

author = "Sarma, \{S. Das\} and Hwang, \{E. H.\} and Igor {\v Z}uti{\'c}",

year = "2000",

month = may,

doi = "10.1006/spmi.2000.0877",

language = "English",

volume = "27",

pages = "421--424",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "5",

note = "3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) ; Conference date: 06-12-1999 Through 10-12-1999",

}

TY - JOUR

T1 - Interface-charged impurity scattering in semiconductor MOSFETs and MODFETs

T2 - 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99)

AU - Sarma, S. Das

AU - Hwang, E. H.

AU - Žutić, Igor

PY - 2000/5

Y1 - 2000/5

N2 - The temperature-dependent resistivity of the two-dimensional (2D) systems in MOSFETs and MODFETs in the `metallic' phase is investigated using the Drude-Boltzmann transport theory. The strong temperature dependence of resistivity arises from the temperature-dependent screening and a low Fermi temperature. The charged impurity scattering, carrier binding, and quantum crossover are analyzed.

AB - The temperature-dependent resistivity of the two-dimensional (2D) systems in MOSFETs and MODFETs in the `metallic' phase is investigated using the Drude-Boltzmann transport theory. The strong temperature dependence of resistivity arises from the temperature-dependent screening and a low Fermi temperature. The charged impurity scattering, carrier binding, and quantum crossover are analyzed.

UR - https://www.scopus.com/pages/publications/0034188046

U2 - 10.1006/spmi.2000.0877

DO - 10.1006/spmi.2000.0877

M3 - Conference article

AN - SCOPUS:0034188046

SN - 0749-6036

VL - 27

SP - 421

EP - 424

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5

Y2 - 6 December 1999 through 10 December 1999

ER -

Interface-charged impurity scattering in semiconductor MOSFETs and MODFETs: Temperature-dependent resistivity and 2D `metallic' behavior

Abstract

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