Interface analysis for cryogenic processed metal/InP

L. He; Z. Q. Shi; W. A. Anderson

Interface analysis for cryogenic processed metal/InP

L. He
, Z. Q. Shi
, W. A. Anderson

Department of Electrical Engineering

Northern Illinois University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Auger electron spectroscopy (AES), electron spectroscopy for chemical analysis (ESCA), and secondary ion mass spectroscopy (SIMS) were used to study the metal/InP interface formed at room temperature (RT=300K) and low temperature (LT=77K). Au and Pd Schottky contacts to InP semiconductor were cryogenically processed to greatly increase barrier height and reduce leakage current. Extensive chemical and structural analysis indicated that this process caused the metal film to be continuous at 50 angstrom, much better than in standard processing. Stoichiometry of InP near the surface is better maintained with this process. A thin P:O compound may exist at the interface which also contributes to a high barrier height.

Original language	English
Pages (from-to)	206-209
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 1994
Event	Proceedings of the 6th International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA Duration: Mar 27 1994 → Mar 31 1994

Cite this

@article{c61e3b0af3d340dfbeeb7fd19425f263,

title = "Interface analysis for cryogenic processed metal/InP",

abstract = "Auger electron spectroscopy (AES), electron spectroscopy for chemical analysis (ESCA), and secondary ion mass spectroscopy (SIMS) were used to study the metal/InP interface formed at room temperature (RT=300K) and low temperature (LT=77K). Au and Pd Schottky contacts to InP semiconductor were cryogenically processed to greatly increase barrier height and reduce leakage current. Extensive chemical and structural analysis indicated that this process caused the metal film to be continuous at 50 angstrom, much better than in standard processing. Stoichiometry of InP near the surface is better maintained with this process. A thin P:O compound may exist at the interface which also contributes to a high barrier height.",

author = "L. He and Shi, \{Z. Q.\} and Anderson, \{W. A.\}",

year = "1994",

language = "English",

pages = "206--209",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 6th International Conference on Indium Phosphide and Related Materials ; Conference date: 27-03-1994 Through 31-03-1994",

}

TY - JOUR

T1 - Interface analysis for cryogenic processed metal/InP

AU - He, L.

AU - Shi, Z. Q.

AU - Anderson, W. A.

PY - 1994

Y1 - 1994

N2 - Auger electron spectroscopy (AES), electron spectroscopy for chemical analysis (ESCA), and secondary ion mass spectroscopy (SIMS) were used to study the metal/InP interface formed at room temperature (RT=300K) and low temperature (LT=77K). Au and Pd Schottky contacts to InP semiconductor were cryogenically processed to greatly increase barrier height and reduce leakage current. Extensive chemical and structural analysis indicated that this process caused the metal film to be continuous at 50 angstrom, much better than in standard processing. Stoichiometry of InP near the surface is better maintained with this process. A thin P:O compound may exist at the interface which also contributes to a high barrier height.

AB - Auger electron spectroscopy (AES), electron spectroscopy for chemical analysis (ESCA), and secondary ion mass spectroscopy (SIMS) were used to study the metal/InP interface formed at room temperature (RT=300K) and low temperature (LT=77K). Au and Pd Schottky contacts to InP semiconductor were cryogenically processed to greatly increase barrier height and reduce leakage current. Extensive chemical and structural analysis indicated that this process caused the metal film to be continuous at 50 angstrom, much better than in standard processing. Stoichiometry of InP near the surface is better maintained with this process. A thin P:O compound may exist at the interface which also contributes to a high barrier height.

UR - https://www.scopus.com/pages/publications/0028201635

M3 - Conference article

AN - SCOPUS:0028201635

SN - 1092-8669

SP - 206

EP - 209

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 6th International Conference on Indium Phosphide and Related Materials

Y2 - 27 March 1994 through 31 March 1994

ER -

Interface analysis for cryogenic processed metal/InP

Abstract

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