Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures

V. Ya Aleshkin; A. A. Dubinov; S. V. Morozov; M. Ryzhii; T. Otsuji; V. Mitin; M. S. Shur; V. Ryzhii

doi:10.1364/OME.8.001349

Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures

V. Ya Aleshkin
, A. A. Dubinov
, S. V. Morozov
, M. Ryzhii
, T. Otsuji
, V. Mitin
, M. S. Shur
, V. Ryzhii

Department of Electrical Engineering

Russian Academy of Sciences
The University of Aizu
Tohoku University
Rensselaer Polytechnic Institute
Russian Academy of Sciences
Bauman Moscow State Technical University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates the significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A3B5 heterostructures.

Original language	English
Pages (from-to)	1349-1358
Number of pages	10
Journal	Optical Materials Express
Volume	8
Issue number	5
DOIs	https://doi.org/10.1364/OME.8.001349
State	Published - May 1 2018

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10.1364/OME.8.001349

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title = "Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures",

abstract = "We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates the significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A3B5 heterostructures.",

author = "Aleshkin, \{V. Ya\} and Dubinov, \{A. A.\} and Morozov, \{S. V.\} and M. Ryzhii and T. Otsuji and V. Mitin and Shur, \{M. S.\} and V. Ryzhii",

note = "Publisher Copyright: {\textcopyright} 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.",

year = "2018",

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doi = "10.1364/OME.8.001349",

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T1 - Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures

AU - Aleshkin, V. Ya

AU - Dubinov, A. A.

AU - Morozov, S. V.

AU - Ryzhii, M.

AU - Otsuji, T.

AU - Mitin, V.

AU - Shur, M. S.

AU - Ryzhii, V.

PY - 2018/5/1

Y1 - 2018/5/1

N2 - We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates the significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A3B5 heterostructures.

AB - We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates the significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A3B5 heterostructures.

UR - https://www.scopus.com/pages/publications/85046646704

U2 - 10.1364/OME.8.001349

DO - 10.1364/OME.8.001349

M3 - Article

AN - SCOPUS:85046646704

SN - 2159-3930

VL - 8

SP - 1349

EP - 1358

JO - Optical Materials Express

JF - Optical Materials Express

IS - 5

ER -

Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures

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