Interband impact ionization by terahertz illumination of InAs heterostructures

A. G. Markelz; N. G. Asmar B; B. Brar; E. G. Gwinn

doi:10.1063/1.117842

Interband impact ionization by terahertz illumination of InAs heterostructures

A. G. Markelz
, N. G. Asmar B
, B. Brar
, E. G. Gwinn

Physics

University of California at Santa Barbara
Worlds Inc.
Texas Instruments

Research output: Contribution to journal › Article › peer-review

102 Scopus citations

Abstract

Experimental studies of InAs heterostructures illuminated by far-infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which ωτ_m∼1, where τ_m is the momentum relaxation time, and f=ω/2π is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7-8.9 kV/cm for the frequency range 0.3-0.66 THz.

Original language	English
Pages (from-to)	3975-3977
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	26
DOIs	https://doi.org/10.1063/1.117842
State	Published - Dec 23 1996

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title = "Interband impact ionization by terahertz illumination of InAs heterostructures",

abstract = "Experimental studies of InAs heterostructures illuminated by far-infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which ωτm∼1, where τm is the momentum relaxation time, and f=ω/2π is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7-8.9 kV/cm for the frequency range 0.3-0.66 THz.",

author = "Markelz, \{A. G.\} and \{Asmar B\}, \{N. G.\} and B. Brar and Gwinn, \{E. G.\}",

year = "1996",

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T1 - Interband impact ionization by terahertz illumination of InAs heterostructures

AU - Markelz, A. G.

AU - Asmar B, N. G.

AU - Brar, B.

AU - Gwinn, E. G.

PY - 1996/12/23

Y1 - 1996/12/23

N2 - Experimental studies of InAs heterostructures illuminated by far-infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which ωτm∼1, where τm is the momentum relaxation time, and f=ω/2π is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7-8.9 kV/cm for the frequency range 0.3-0.66 THz.

AB - Experimental studies of InAs heterostructures illuminated by far-infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge density rise to interband impact ionization in a regime in which ωτm∼1, where τm is the momentum relaxation time, and f=ω/2π is the FIR frequency. The dependence of the density rise on the FIR field strength supports this interpretation, and gives threshold fields of 3.7-8.9 kV/cm for the frequency range 0.3-0.66 THz.

UR - https://www.scopus.com/pages/publications/0030393957

U2 - 10.1063/1.117842

DO - 10.1063/1.117842

M3 - Article

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SN - 0003-6951

VL - 69

SP - 3975

EP - 3977

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Interband impact ionization by terahertz illumination of InAs heterostructures

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