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Interaction effects in quasi-ballistic one-dimensional channels formed in AlGaAs/GaAs heterostructures

  • SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigate corrections to the conductivity in weakly disordered, quasi-one-dimensional conductors, where the conductor width w<L T=vF/T, vF is the Fermi velocity. For such conductors with a 2D electron spectra the temperature-dependent corrections are predicted to be proportional to lnT [A. Sergeev et al., Phys. Rev. B 69, 075310 (2004)]. As expected, due to the interference of electron-electron scattering and elastic electron scattering from impurities and defects the observed temperature dependent conductance of the channels measured is logarithmic and inversely proportional to the channel width, which is strong evidence in favor of one-dimensional interaction effects.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages333-334
Number of pages2
DOIs
StatePublished - 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: Jul 27 2008Aug 1 2008

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference29th International Conference on Physics of Semiconductors, ICPS 29
Country/TerritoryBrazil
CityRio de Janeiro
Period07/27/0808/1/08

Keywords

  • Electron-electron
  • Interference
  • Many-body effects
  • One dimensional
  • Quasi-ballistic
  • Resistivity

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