Intensity-dependent photoluminescence spectra of semiconductor-doped glasses

J. P. Zheng; L. Shi; F. S. Choa; P. L. Liu; H. S. Kwok

doi:10.1063/1.100396

Intensity-dependent photoluminescence spectra of semiconductor-doped glasses

J. P. Zheng
, L. Shi
, F. S. Choa
, P. L. Liu
, H. S. Kwok

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

The photoluminescence spectra of CdS_x Se_1-x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms were identified. The dynamic behavior can be explained by the competition between tunneling-mediated recombination of deeply trapped charges and direct recombination of excitons, free and shallowly trapped carriers, and nonradiative recombination. Large (>30 nm) blue shifts of both peaks were also observed as a function of the laser intensity.

Original language	English
Pages (from-to)	643-645
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	8
DOIs	https://doi.org/10.1063/1.100396
State	Published - 1988

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10.1063/1.100396

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title = "Intensity-dependent photoluminescence spectra of semiconductor-doped glasses",

abstract = "The photoluminescence spectra of CdSx Se1-x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms were identified. The dynamic behavior can be explained by the competition between tunneling-mediated recombination of deeply trapped charges and direct recombination of excitons, free and shallowly trapped carriers, and nonradiative recombination. Large (>30 nm) blue shifts of both peaks were also observed as a function of the laser intensity.",

author = "Zheng, \{J. P.\} and L. Shi and Choa, \{F. S.\} and Liu, \{P. L.\} and Kwok, \{H. S.\}",

year = "1988",

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pages = "643--645",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Intensity-dependent photoluminescence spectra of semiconductor-doped glasses

AU - Zheng, J. P.

AU - Shi, L.

AU - Choa, F. S.

AU - Liu, P. L.

AU - Kwok, H. S.

PY - 1988

Y1 - 1988

N2 - The photoluminescence spectra of CdSx Se1-x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms were identified. The dynamic behavior can be explained by the competition between tunneling-mediated recombination of deeply trapped charges and direct recombination of excitons, free and shallowly trapped carriers, and nonradiative recombination. Large (>30 nm) blue shifts of both peaks were also observed as a function of the laser intensity.

AB - The photoluminescence spectra of CdSx Se1-x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms were identified. The dynamic behavior can be explained by the competition between tunneling-mediated recombination of deeply trapped charges and direct recombination of excitons, free and shallowly trapped carriers, and nonradiative recombination. Large (>30 nm) blue shifts of both peaks were also observed as a function of the laser intensity.

UR - https://www.scopus.com/pages/publications/36549092589

U2 - 10.1063/1.100396

DO - 10.1063/1.100396

M3 - Article

AN - SCOPUS:36549092589

SN - 0003-6951

VL - 53

SP - 643

EP - 645

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Intensity-dependent photoluminescence spectra of semiconductor-doped glasses

Abstract

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