Insulating state in open quantum dots and quantum dot arrays

F. Ge; C. Prasad; A. Andresen; J. P. Bird; D. K. Ferry; L. H. Lin; N. Aoki; K. Nakao; Y. Ochiai; K. Ishibashi; Y. Aoyagi; T. Sugano

doi:10.1002/(SICI)1521-3889(200001)9:1<65::AID-ANDP65>3.0.CO;2-M

Insulating state in open quantum dots and quantum dot arrays

F. Ge
, C. Prasad
, A. Andresen
, J. P. Bird
, D. K. Ferry
, L. H. Lin
, N. Aoki
, K. Nakao
, Y. Ochiai
, K. Ishibashi
, Y. Aoyagi
, T. Sugano

Department of Electrical Engineering

Arizona State University
Chiba University
RIKEN

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split-gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50e²/h.

Original language	English
Pages (from-to)	65-68
Number of pages	4
Journal	Annalen der Physik
Volume	9
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3889(200001)9:1<65::AID-ANDP65>3.0.CO;2-M
State	Published - 2000

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10.1002/(SICI)1521-3889(200001)9:1<65::AID-ANDP65>3.0.CO;2-M

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title = "Insulating state in open quantum dots and quantum dot arrays",

abstract = "We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split-gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50e2/h.",

author = "F. Ge and C. Prasad and A. Andresen and Bird, \{J. P.\} and Ferry, \{D. K.\} and Lin, \{L. H.\} and N. Aoki and K. Nakao and Y. Ochiai and K. Ishibashi and Y. Aoyagi and T. Sugano",

year = "2000",

doi = "10.1002/(SICI)1521-3889(200001)9:1<65::AID-ANDP65>3.0.CO;2-M",

language = "English",

volume = "9",

pages = "65--68",

journal = "Annalen der Physik",

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TY - JOUR

T1 - Insulating state in open quantum dots and quantum dot arrays

AU - Ge, F.

AU - Prasad, C.

AU - Andresen, A.

AU - Bird, J. P.

AU - Ferry, D. K.

AU - Lin, L. H.

AU - Aoki, N.

AU - Nakao, K.

AU - Ochiai, Y.

AU - Ishibashi, K.

AU - Aoyagi, Y.

AU - Sugano, T.

PY - 2000

Y1 - 2000

N2 - We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split-gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50e2/h.

AB - We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split-gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50e2/h.

UR - https://www.scopus.com/pages/publications/0034465427

U2 - 10.1002/(SICI)1521-3889(200001)9:1<65::AID-ANDP65>3.0.CO;2-M

DO - 10.1002/(SICI)1521-3889(200001)9:1<65::AID-ANDP65>3.0.CO;2-M

M3 - Article

AN - SCOPUS:0034465427

SN - 0003-3804

VL - 9

SP - 65

EP - 68

JO - Annalen der Physik

JF - Annalen der Physik

IS - 1

ER -

Insulating state in open quantum dots and quantum dot arrays

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