In1-xMnxSb - A narrow-gap ferromagnetic semiconductor

T. Wojtowicz; G. Cywiński; W. L. Lim; X. Liu; M. Dobrowolska; J. K. Furdyna; K. M. Yu; W. Walukiewicz; G. B. Kim; M. Cheon; X. Chen; S. M. Wang; H. Luo

doi:10.1063/1.1583142

In_1-xMn_xSb - A narrow-gap ferromagnetic semiconductor

T. Wojtowicz
, G. Cywiński
, W. L. Lim
, X. Liu
, M. Dobrowolska
, J. K. Furdyna
, K. M. Yu
, W. Walukiewicz
, G. B. Kim
, M. Cheon
, X. Chen
, S. M. Wang
, H. Luo

Physics

University of Notre Dame
Institute of Physics of the Polish Academy of Sciences
Lawrence Berkeley National Laboratory
SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

The growth of a narrow-gap ferromagnetic In_1-xMn_xSb semiconductor alloy by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates was discussed. Since In_1-xMn_xSb is characterized by a large lattice constant, and by band parameters, the magnetic properties of In_1-xMn_xSb can be used for testing current theoretical models of ferromagnetism in III-Mn-V ferromagnets. The material can also be used where either small masses or high carrier mobilities may be desirable.

Original language	English
Pages (from-to)	4310-4312
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	24
DOIs	https://doi.org/10.1063/1.1583142
State	Published - Jun 16 2003

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10.1063/1.1583142

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title = "In1-xMnxSb - A narrow-gap ferromagnetic semiconductor",

abstract = "The growth of a narrow-gap ferromagnetic In1-xMnxSb semiconductor alloy by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates was discussed. Since In1-xMnxSb is characterized by a large lattice constant, and by band parameters, the magnetic properties of In1-xMnxSb can be used for testing current theoretical models of ferromagnetism in III-Mn-V ferromagnets. The material can also be used where either small masses or high carrier mobilities may be desirable.",

author = "T. Wojtowicz and G. Cywi{\'n}ski and Lim, \{W. L.\} and X. Liu and M. Dobrowolska and Furdyna, \{J. K.\} and Yu, \{K. M.\} and W. Walukiewicz and Kim, \{G. B.\} and M. Cheon and X. Chen and Wang, \{S. M.\} and H. Luo",

year = "2003",

month = jun,

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doi = "10.1063/1.1583142",

language = "English",

volume = "82",

pages = "4310--4312",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - In1-xMnxSb - A narrow-gap ferromagnetic semiconductor

AU - Wojtowicz, T.

AU - Cywiński, G.

AU - Lim, W. L.

AU - Liu, X.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Kim, G. B.

AU - Cheon, M.

AU - Chen, X.

AU - Wang, S. M.

AU - Luo, H.

PY - 2003/6/16

Y1 - 2003/6/16

N2 - The growth of a narrow-gap ferromagnetic In1-xMnxSb semiconductor alloy by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates was discussed. Since In1-xMnxSb is characterized by a large lattice constant, and by band parameters, the magnetic properties of In1-xMnxSb can be used for testing current theoretical models of ferromagnetism in III-Mn-V ferromagnets. The material can also be used where either small masses or high carrier mobilities may be desirable.

AB - The growth of a narrow-gap ferromagnetic In1-xMnxSb semiconductor alloy by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates was discussed. Since In1-xMnxSb is characterized by a large lattice constant, and by band parameters, the magnetic properties of In1-xMnxSb can be used for testing current theoretical models of ferromagnetism in III-Mn-V ferromagnets. The material can also be used where either small masses or high carrier mobilities may be desirable.

UR - https://www.scopus.com/pages/publications/0037773368

U2 - 10.1063/1.1583142

DO - 10.1063/1.1583142

M3 - Article

AN - SCOPUS:0037773368

SN - 0003-6951

VL - 82

SP - 4310

EP - 4312

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

In_1-xMn_xSb - A narrow-gap ferromagnetic semiconductor

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