In0.53Ga0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth

Uttam Singisetti; Mark A. Wistey; Gregory J. Burek; Ashish K. Baraskar; Brian J. Thibeault; Arthur C. Gossard; Mark J.W. Rodwell; Byungha Shin; Eun J. Kim; Paul C. McIntyre; Bo Yu; Yu Yuan; Dennis Wang; Yuan Taur; Pater Asbeck; Yong Ju Lee

doi:10.1109/LED.2009.2031304

In_0.53Ga_0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth

Uttam Singisetti
, Mark A. Wistey
, Gregory J. Burek
, Ashish K. Baraskar
, Brian J. Thibeault
, Arthur C. Gossard
, Mark J.W. Rodwell
, Byungha Shin
, Eun J. Kim
, Paul C. McIntyre
, Bo Yu
, Yu Yuan
, Dennis Wang
, Yuan Taur
, Pater Asbeck
, Yong Ju Lee

Department of Electrical Engineering

University of California at Santa Barbara
Stanford University
University of California at San Diego
Intel

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

We report Al₂O₃In_0.53Ga_0.47 As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n⁺ regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFETs; a 5-nm In_0.53 Ga_0.47As channel with an In_0.48Al_0.52As back confinement layer and the n⁺⁺ source/drain junctions do not extend below the 5-nm channel. A device with 200-nm gate length showed I_D = 0.95 mA}/μm current density at V_GS = 4.0 V and g_m = 0.45 mS/μm peak transconductance at V_DS = 2.0 V.

Original language	English
Pages (from-to)	1128-1130
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	11
DOIs	https://doi.org/10.1109/LED.2009.2031304
State	Published - 2009

Keywords

III-V MOSFET
InAs source/drain
InGaAs MOSFET
Migration-enhanced epitaxial regrowth
Source/drain regrowth

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10.1109/LED.2009.2031304

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Singisetti, U., Wistey, M. A., Burek, G. J., Baraskar, A. K., Thibeault, B. J., Gossard, A. C., Rodwell, M. J. W., Shin, B., Kim, E. J., McIntyre, P. C., Yu, B., Yuan, Y., Wang, D., Taur, Y., Asbeck, P., & Lee, Y. J. (2009). In_0.53Ga_0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth. IEEE Electron Device Letters, 30(11), 1128-1130. https://doi.org/10.1109/LED.2009.2031304

@article{4521c1715e974d7287e9b093fbe36a2b,

title = "In0.53Ga0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth",

abstract = "We report Al2O3In0.53Ga0.47 As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n+ regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFETs; a 5-nm In0.53 Ga0.47As channel with an In0.48Al0.52As back confinement layer and the n++ source/drain junctions do not extend below the 5-nm channel. A device with 200-nm gate length showed ID = 0.95 mA\}/μm current density at VGS = 4.0 V and gm = 0.45 mS/μm peak transconductance at VDS = 2.0 V.",

keywords = "III-V MOSFET, InAs source/drain, InGaAs MOSFET, Migration-enhanced epitaxial regrowth, Source/drain regrowth",

author = "Uttam Singisetti and Wistey, \{Mark A.\} and Burek, \{Gregory J.\} and Baraskar, \{Ashish K.\} and Thibeault, \{Brian J.\} and Gossard, \{Arthur C.\} and Rodwell, \{Mark J.W.\} and Byungha Shin and Kim, \{Eun J.\} and McIntyre, \{Paul C.\} and Bo Yu and Yu Yuan and Dennis Wang and Yuan Taur and Pater Asbeck and Lee, \{Yong Ju\}",

year = "2009",

doi = "10.1109/LED.2009.2031304",

language = "English",

volume = "30",

pages = "1128--1130",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

Singisetti, U, Wistey, MA, Burek, GJ, Baraskar, AK, Thibeault, BJ, Gossard, AC, Rodwell, MJW, Shin, B, Kim, EJ, McIntyre, PC, Yu, B, Yuan, Y, Wang, D, Taur, Y, Asbeck, P & Lee, YJ 2009, 'In_0.53Ga_0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth', IEEE Electron Device Letters, vol. 30, no. 11, pp. 1128-1130. https://doi.org/10.1109/LED.2009.2031304

TY - JOUR

T1 - In0.53Ga0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth

AU - Singisetti, Uttam

AU - Wistey, Mark A.

AU - Burek, Gregory J.

AU - Baraskar, Ashish K.

AU - Thibeault, Brian J.

AU - Gossard, Arthur C.

AU - Rodwell, Mark J.W.

AU - Shin, Byungha

AU - Kim, Eun J.

AU - McIntyre, Paul C.

AU - Yu, Bo

AU - Yuan, Yu

AU - Wang, Dennis

AU - Taur, Yuan

AU - Asbeck, Pater

AU - Lee, Yong Ju

PY - 2009

Y1 - 2009

N2 - We report Al2O3In0.53Ga0.47 As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n+ regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFETs; a 5-nm In0.53 Ga0.47As channel with an In0.48Al0.52As back confinement layer and the n++ source/drain junctions do not extend below the 5-nm channel. A device with 200-nm gate length showed ID = 0.95 mA}/μm current density at VGS = 4.0 V and gm = 0.45 mS/μm peak transconductance at VDS = 2.0 V.

AB - We report Al2O3In0.53Ga0.47 As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n+ regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFETs; a 5-nm In0.53 Ga0.47As channel with an In0.48Al0.52As back confinement layer and the n++ source/drain junctions do not extend below the 5-nm channel. A device with 200-nm gate length showed ID = 0.95 mA}/μm current density at VGS = 4.0 V and gm = 0.45 mS/μm peak transconductance at VDS = 2.0 V.

KW - III-V MOSFET

KW - InAs source/drain

KW - InGaAs MOSFET

KW - Migration-enhanced epitaxial regrowth

KW - Source/drain regrowth

UR - https://www.scopus.com/pages/publications/70350595903

U2 - 10.1109/LED.2009.2031304

DO - 10.1109/LED.2009.2031304

M3 - Article

AN - SCOPUS:70350595903

SN - 0741-3106

VL - 30

SP - 1128

EP - 1130

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

In_0.53Ga_0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth

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Keywords

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