Abstract
We report new instrumentation for rapidly and reliably measuring the temperature-dependent photoluminescence response from porous silicon as a function of analyte vapor concentration. The new system maintains the porous silicon under inert conditions and it allows on-the-fly steady-state and time-resolved photoluminescence intensity and hyper-spectral measurements between 293 K and 450 K. The new system yields reliable data at least 100-fold faster in comparison to previous instrument platforms.
| Original language | English |
|---|---|
| Pages (from-to) | 1974-1980 |
| Number of pages | 7 |
| Journal | Applied Spectroscopy |
| Volume | 70 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 2016 |
Keywords
- photoluminescence
- Porous silicon
- Stern-Volmer quenching
- temperature dependence
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