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InP HBT digital ICs and MMICs in the 140-220 GHz band

  • Mark Rodwell
  • , Z. Griffith
  • , V. Paidi
  • , N. Parthasarathy
  • , C. Sheldon
  • , U. Singisetti
  • , M. Urteaga
  • , R. Pierson
  • , P. Rowell
  • , B. Brar
  • University of California at Santa Barbara
  • Teledyne Technologies

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Well-balanced InP HBTs now have ∼450 GHz cutoff frequencies and ∼4 V breakdown. With such devices, 150 GHz digital circuits (static dividers) and 175 GHz amplifiers have been demonstrated. We discuss device requirements (scaling laws and scaling limits) for realizing transistors and both digital and analog/RF circuits at sub-mm-wave frequencies; the most critical limitations are metal/semiconductor contact resistivities and dissipated power densities. Given present contact performance and thermal design, 200 GHz digital technologies and 300 GHz power amplifiers are now feasible and will soon be realized.

Original languageEnglish
Title of host publicationThe Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005
Pages620-621
Number of pages2
StatePublished - 2005
Event30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005 - Williamsburg, VA, United States
Duration: Sep 19 2005Sep 23 2005

Publication series

NameThe Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005
Volume2

Conference

Conference30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005
Country/TerritoryUnited States
CityWilliamsburg, VA
Period09/19/0509/23/05

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