Abstract
The etch decoration/transmission electron microscopy technique has been used to study the kinetics of the C-H20 reaction on the basal plane of single crystal graphite. The turnover frequency of the edge carbon surrounding monolayer pits on the basal plane varies with pit density. At 1 pit/μm2, 23 torr of H2O and 600 °C, the values are 0.037 s-1 for uncoated graphite and 0.011 and 0.040 s-1 for K2CO3 and KOH coated samples, respectively. A carbanion mechanism is proposed to explain the phenomenon of inhibition by K2CO3. At 550 °C, the K2CO3 forms hexagonal particles with a fixed orientation on the basal plane of graphite, probably due to particle growth in a preferred crystallographic direction of the substrate. These results are discussed in conjunction with the strong catalysis of the overall rates (on all edges and planes of carbon) by both K2CO3 and KOH, as reported by previous workers.
| Original language | English |
|---|---|
| Pages (from-to) | 298-303 |
| Number of pages | 6 |
| Journal | Industrial and Engineering Chemistry Fundamentals |
| Volume | 23 |
| Issue number | 3 |
| DOIs | |
| State | Published - Aug 1 1984 |
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