Inhibiting surface roughening during the thermal desorption of silicon

A. F. Pun; X. Wang; J. B. Meeks; J. P. Zheng

Inhibiting surface roughening during the thermal desorption of silicon

A. F. Pun
, X. Wang
, J. B. Meeks
, J. P. Zheng

Department of Electrical Engineering

Florida State University

Research output: Contribution to conference › Paper › peer-review

Abstract

An in-situ method for inhibiting surface roughening during the thermal removal of the Si(100) native oxide layer is explored and developed. The proposed method is readily implementable in currently used deposition systems with minimal preparation. The results indicate a significant improvement in surface smoothness, from an average roughness of 2.20 nm to 0.56 nm, while leaving an exposed surface which has been demonstrated to be suitable for epitaxial growth. Additional advantages in the proposed method compared to conventional techniques are also discussed. The reconstructed wafer surface and subsurface layers exhibit strong tensile stress up to quite deep wafer regions (- 10 μm), as was observed by depth resolved μ-Raman analysis.

Original language	English
Pages	23-26
Number of pages	4
State	Published - 2004
Event	High Purity Silicon VIII - Proceedings of the International Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004

Conference

Conference	High Purity Silicon VIII - Proceedings of the International Symposium
Country/Territory	United States
City	Honolulu, HI
Period	10/3/04 → 10/8/04

Cite this

@conference{ce8d4f849e784cf792f293dad162a35c,

title = "Inhibiting surface roughening during the thermal desorption of silicon",

abstract = "An in-situ method for inhibiting surface roughening during the thermal removal of the Si(100) native oxide layer is explored and developed. The proposed method is readily implementable in currently used deposition systems with minimal preparation. The results indicate a significant improvement in surface smoothness, from an average roughness of 2.20 nm to 0.56 nm, while leaving an exposed surface which has been demonstrated to be suitable for epitaxial growth. Additional advantages in the proposed method compared to conventional techniques are also discussed. The reconstructed wafer surface and subsurface layers exhibit strong tensile stress up to quite deep wafer regions (- 10 μm), as was observed by depth resolved μ-Raman analysis.",

author = "Pun, \{A. F.\} and X. Wang and Meeks, \{J. B.\} and Zheng, \{J. P.\}",

year = "2004",

language = "English",

pages = "23--26",

note = "High Purity Silicon VIII - Proceedings of the International Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

}

TY - CONF

T1 - Inhibiting surface roughening during the thermal desorption of silicon

AU - Pun, A. F.

AU - Wang, X.

AU - Meeks, J. B.

AU - Zheng, J. P.

PY - 2004

Y1 - 2004

N2 - An in-situ method for inhibiting surface roughening during the thermal removal of the Si(100) native oxide layer is explored and developed. The proposed method is readily implementable in currently used deposition systems with minimal preparation. The results indicate a significant improvement in surface smoothness, from an average roughness of 2.20 nm to 0.56 nm, while leaving an exposed surface which has been demonstrated to be suitable for epitaxial growth. Additional advantages in the proposed method compared to conventional techniques are also discussed. The reconstructed wafer surface and subsurface layers exhibit strong tensile stress up to quite deep wafer regions (- 10 μm), as was observed by depth resolved μ-Raman analysis.

AB - An in-situ method for inhibiting surface roughening during the thermal removal of the Si(100) native oxide layer is explored and developed. The proposed method is readily implementable in currently used deposition systems with minimal preparation. The results indicate a significant improvement in surface smoothness, from an average roughness of 2.20 nm to 0.56 nm, while leaving an exposed surface which has been demonstrated to be suitable for epitaxial growth. Additional advantages in the proposed method compared to conventional techniques are also discussed. The reconstructed wafer surface and subsurface layers exhibit strong tensile stress up to quite deep wafer regions (- 10 μm), as was observed by depth resolved μ-Raman analysis.

UR - https://www.scopus.com/pages/publications/17044365450

M3 - Paper

AN - SCOPUS:17044365450

SP - 23

EP - 26

T2 - High Purity Silicon VIII - Proceedings of the International Symposium

Y2 - 3 October 2004 through 8 October 2004

ER -

Inhibiting surface roughening during the thermal desorption of silicon

Abstract

Conference

Other files and links

Fingerprint

Cite this