Inherent Photogating in MoTe2 Transistors with Van der Waals Contacts

Anthony Cabanillas; Hemendra Nath Jaiswal; Anindita Chakravarty; Asma Ahmed; Yu Fu; Chu Te Chen; Fei Yao; Huamin Li

doi:10.1109/DRC61706.2024.10605297

Inherent Photogating in MoTe₂ Transistors with Van der Waals Contacts

Anthony Cabanillas
, Hemendra Nath Jaiswal
, Anindita Chakravarty
, Asma Ahmed
, Yu Fu
, Chu Te Chen
, Fei Yao
, Huamin Li

SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Emerging two-dimensional (2D) materials and their van der Waals (vdW) heterojunctions are promising for high-performance optoelectronics devices [1]. In this work, we exploited polymorphic nature of 2D MoTe₂ , including 2H semiconductor and 1T' semimetal phases, integrated with low-energy vdW contacts to demonstrate novel and superior photoresponse in both phototransistor and photodiode configurations. Especially, 2H-MoTe₂ has intrinsic ambipolar charge transport with an inherent n-type photogating effect, giving rise to a reconfigurable photodetection. This work presents the potential of 2D MoTe₂ for future high-performance multi-functional optoelectronics.

Original language	English
Title of host publication	DRC 2024 - 82nd Device Research Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350373738
DOIs	https://doi.org/10.1109/DRC61706.2024.10605297
State	Published - 2024
Event	82nd Device Research Conference, DRC 2024 - College Park, United States Duration: Jun 24 2024 → Jun 26 2024

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	82nd Device Research Conference, DRC 2024
Country/Territory	United States
City	College Park
Period	06/24/24 → 06/26/24

Access to Document

10.1109/DRC61706.2024.10605297

Cite this

Cabanillas, A., Jaiswal, H. N., Chakravarty, A., Ahmed, A., Fu, Y., Chen, C. T., Yao, F., & Li, H. (2024). Inherent Photogating in MoTe₂ Transistors with Van der Waals Contacts. In DRC 2024 - 82nd Device Research Conference (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC61706.2024.10605297

@inproceedings{aad4d16f58e34cc5b231ef81fe3cca38,

title = "Inherent Photogating in MoTe2 Transistors with Van der Waals Contacts",

abstract = "Emerging two-dimensional (2D) materials and their van der Waals (vdW) heterojunctions are promising for high-performance optoelectronics devices [1]. In this work, we exploited polymorphic nature of 2D MoTe2 , including 2H semiconductor and 1T' semimetal phases, integrated with low-energy vdW contacts to demonstrate novel and superior photoresponse in both phototransistor and photodiode configurations. Especially, 2H-MoTe2 has intrinsic ambipolar charge transport with an inherent n-type photogating effect, giving rise to a reconfigurable photodetection. This work presents the potential of 2D MoTe2 for future high-performance multi-functional optoelectronics.",

author = "Anthony Cabanillas and Jaiswal, \{Hemendra Nath\} and Anindita Chakravarty and Asma Ahmed and Yu Fu and Chen, \{Chu Te\} and Fei Yao and Huamin Li",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 82nd Device Research Conference, DRC 2024 ; Conference date: 24-06-2024 Through 26-06-2024",

year = "2024",

doi = "10.1109/DRC61706.2024.10605297",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Cabanillas, A, Jaiswal, HN, Chakravarty, A, Ahmed, A, Fu, Y, Chen, CT, Yao, F & Li, H 2024, Inherent Photogating in MoTe₂ Transistors with Van der Waals Contacts. in DRC 2024 - 82nd Device Research Conference. Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., 82nd Device Research Conference, DRC 2024, College Park, United States, 06/24/24. https://doi.org/10.1109/DRC61706.2024.10605297

Inherent Photogating in MoTe₂ Transistors with Van der Waals Contacts. / Cabanillas, Anthony; Jaiswal, Hemendra Nath; Chakravarty, Anindita et al.
DRC 2024 - 82nd Device Research Conference. Institute of Electrical and Electronics Engineers Inc., 2024. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Inherent Photogating in MoTe2 Transistors with Van der Waals Contacts

AU - Cabanillas, Anthony

AU - Jaiswal, Hemendra Nath

AU - Chakravarty, Anindita

AU - Ahmed, Asma

AU - Fu, Yu

AU - Chen, Chu Te

AU - Yao, Fei

AU - Li, Huamin

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N2 - Emerging two-dimensional (2D) materials and their van der Waals (vdW) heterojunctions are promising for high-performance optoelectronics devices [1]. In this work, we exploited polymorphic nature of 2D MoTe2 , including 2H semiconductor and 1T' semimetal phases, integrated with low-energy vdW contacts to demonstrate novel and superior photoresponse in both phototransistor and photodiode configurations. Especially, 2H-MoTe2 has intrinsic ambipolar charge transport with an inherent n-type photogating effect, giving rise to a reconfigurable photodetection. This work presents the potential of 2D MoTe2 for future high-performance multi-functional optoelectronics.

AB - Emerging two-dimensional (2D) materials and their van der Waals (vdW) heterojunctions are promising for high-performance optoelectronics devices [1]. In this work, we exploited polymorphic nature of 2D MoTe2 , including 2H semiconductor and 1T' semimetal phases, integrated with low-energy vdW contacts to demonstrate novel and superior photoresponse in both phototransistor and photodiode configurations. Especially, 2H-MoTe2 has intrinsic ambipolar charge transport with an inherent n-type photogating effect, giving rise to a reconfigurable photodetection. This work presents the potential of 2D MoTe2 for future high-performance multi-functional optoelectronics.

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