Influence of quantum-interference on the fringing-field magnetoresistance of hybrid ferromagnetic/semiconductor devices

T. Y. Lin; J. U. Bae; G. Bohra; K. Lim; J. L. Reno; J. P. Bird

doi:10.1063/1.3236775

Influence of quantum-interference on the fringing-field magnetoresistance of hybrid ferromagnetic/semiconductor devices

T. Y. Lin
, J. U. Bae
, G. Bohra
, K. Lim
, J. L. Reno
, J. P. Bird

Department of Electrical Engineering

SUNY Buffalo
Sandia National Laboratories, New Mexico

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We investigate magnetotransport in hybrid ferromagnetic devices, comprised of laterally confined semiconductor channels that are bridged by nanomagnets that generate magnetic barriers. We identify a regime of low-temperature behavior in these devices, in which the magnetoresistance generated by the nanomagnets is suppressed with decrease of temperature. This result is shown to be correlated with the onset of quantum-interference effects (weak localization) in the semiconductor channel.

Original language	English
Article number	143113
Journal	Applied Physics Letters
Volume	95
Issue number	14
DOIs	https://doi.org/10.1063/1.3236775
State	Published - 2009

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title = "Influence of quantum-interference on the fringing-field magnetoresistance of hybrid ferromagnetic/semiconductor devices",

abstract = "We investigate magnetotransport in hybrid ferromagnetic devices, comprised of laterally confined semiconductor channels that are bridged by nanomagnets that generate magnetic barriers. We identify a regime of low-temperature behavior in these devices, in which the magnetoresistance generated by the nanomagnets is suppressed with decrease of temperature. This result is shown to be correlated with the onset of quantum-interference effects (weak localization) in the semiconductor channel.",

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AU - Lin, T. Y.

AU - Bae, J. U.

AU - Bohra, G.

AU - Lim, K.

AU - Reno, J. L.

AU - Bird, J. P.

PY - 2009

Y1 - 2009

N2 - We investigate magnetotransport in hybrid ferromagnetic devices, comprised of laterally confined semiconductor channels that are bridged by nanomagnets that generate magnetic barriers. We identify a regime of low-temperature behavior in these devices, in which the magnetoresistance generated by the nanomagnets is suppressed with decrease of temperature. This result is shown to be correlated with the onset of quantum-interference effects (weak localization) in the semiconductor channel.

AB - We investigate magnetotransport in hybrid ferromagnetic devices, comprised of laterally confined semiconductor channels that are bridged by nanomagnets that generate magnetic barriers. We identify a regime of low-temperature behavior in these devices, in which the magnetoresistance generated by the nanomagnets is suppressed with decrease of temperature. This result is shown to be correlated with the onset of quantum-interference effects (weak localization) in the semiconductor channel.

UR - https://www.scopus.com/pages/publications/70349934307

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DO - 10.1063/1.3236775

M3 - Article

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VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143113

ER -

Influence of quantum-interference on the fringing-field magnetoresistance of hybrid ferromagnetic/semiconductor devices

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