Indium tin oxide on InP by pulsed laser deposition

Q. X. Jia; J. P. Zheng; H. S. Kwok; W. A. Anderson

doi:10.1016/0040-6090(94)06362-1

Indium tin oxide on InP by pulsed laser deposition

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Indium tin oxide (ITO) films with a resistivity of the order of 6 × 10^-4 Ω cm were deposited at room temperature on InP by pulsed laser ablation. The resistivity of the films was further reduced to less than 2 × 10^-4 Ω cm if the deposition was done at a substrate temperature of 310 °C. The enhanced blue response of the photovoltaic device of ITO/InP deposited at room temperature indicated improved collection efficiency near the ITO-InP interface. The dark current-voltage measurements indicated higher excess current at lower bias for the devices fabricated at 310 °C.

Original language	English
Pages (from-to)	260-263
Number of pages	4
Journal	Thin Solid Films
Volume	258
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(94)06362-1
State	Published - Mar 15 1995

Keywords

Electrical properties and measurements
Indium phosphide
Laser ablation
Photovoltage

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10.1016/0040-6090(94)06362-1

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title = "Indium tin oxide on InP by pulsed laser deposition",

abstract = "Indium tin oxide (ITO) films with a resistivity of the order of 6 × 10-4 Ω cm were deposited at room temperature on InP by pulsed laser ablation. The resistivity of the films was further reduced to less than 2 × 10-4 Ω cm if the deposition was done at a substrate temperature of 310 °C. The enhanced blue response of the photovoltaic device of ITO/InP deposited at room temperature indicated improved collection efficiency near the ITO-InP interface. The dark current-voltage measurements indicated higher excess current at lower bias for the devices fabricated at 310 °C.",

keywords = "Electrical properties and measurements, Indium phosphide, Laser ablation, Photovoltage",

author = "Jia, \{Q. X.\} and Zheng, \{J. P.\} and Kwok, \{H. S.\} and Anderson, \{W. A.\}",

year = "1995",

month = mar,

day = "15",

doi = "10.1016/0040-6090(94)06362-1",

language = "English",

volume = "258",

pages = "260--263",

journal = "Thin Solid Films",

issn = "0040-6090",

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TY - JOUR

T1 - Indium tin oxide on InP by pulsed laser deposition

AU - Jia, Q. X.

AU - Zheng, J. P.

AU - Kwok, H. S.

AU - Anderson, W. A.

PY - 1995/3/15

Y1 - 1995/3/15

N2 - Indium tin oxide (ITO) films with a resistivity of the order of 6 × 10-4 Ω cm were deposited at room temperature on InP by pulsed laser ablation. The resistivity of the films was further reduced to less than 2 × 10-4 Ω cm if the deposition was done at a substrate temperature of 310 °C. The enhanced blue response of the photovoltaic device of ITO/InP deposited at room temperature indicated improved collection efficiency near the ITO-InP interface. The dark current-voltage measurements indicated higher excess current at lower bias for the devices fabricated at 310 °C.

AB - Indium tin oxide (ITO) films with a resistivity of the order of 6 × 10-4 Ω cm were deposited at room temperature on InP by pulsed laser ablation. The resistivity of the films was further reduced to less than 2 × 10-4 Ω cm if the deposition was done at a substrate temperature of 310 °C. The enhanced blue response of the photovoltaic device of ITO/InP deposited at room temperature indicated improved collection efficiency near the ITO-InP interface. The dark current-voltage measurements indicated higher excess current at lower bias for the devices fabricated at 310 °C.

KW - Electrical properties and measurements

KW - Indium phosphide

KW - Laser ablation

KW - Photovoltage

UR - https://www.scopus.com/pages/publications/0007083354

U2 - 10.1016/0040-6090(94)06362-1

DO - 10.1016/0040-6090(94)06362-1

M3 - Article

AN - SCOPUS:0007083354

SN - 0040-6090

VL - 258

SP - 260

EP - 263

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Indium tin oxide on InP by pulsed laser deposition

Abstract

Keywords

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