Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy

W. K. Chen; J. F. Chen; J. C. Chen; H. M. Kim; L. Anthony; C. R. Wie; P. L. Liu

doi:10.1063/1.101795

Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy

W. K. Chen
, J. F. Chen
, J. C. Chen
, H. M. Kim
, L. Anthony
, C. R. Wie
, P. L. Liu

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the 10 K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.

Original language	English
Pages (from-to)	749-751
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	8
DOIs	https://doi.org/10.1063/1.101795
State	Published - 1989

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title = "Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy",

abstract = "We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the 10 K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.",

author = "Chen, \{W. K.\} and Chen, \{J. F.\} and Chen, \{J. C.\} and Kim, \{H. M.\} and L. Anthony and Wie, \{C. R.\} and Liu, \{P. L.\}",

year = "1989",

doi = "10.1063/1.101795",

language = "English",

volume = "55",

pages = "749--751",

journal = "Applied Physics Letters",

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T1 - Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy

AU - Chen, W. K.

AU - Chen, J. F.

AU - Chen, J. C.

AU - Kim, H. M.

AU - Anthony, L.

AU - Wie, C. R.

AU - Liu, P. L.

PY - 1989

Y1 - 1989

N2 - We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the 10 K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.

AB - We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the 10 K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.

UR - https://www.scopus.com/pages/publications/0142136411

U2 - 10.1063/1.101795

DO - 10.1063/1.101795

M3 - Article

AN - SCOPUS:0142136411

SN - 0003-6951

VL - 55

SP - 749

EP - 751

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy

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