Abstract
A systematic study of the well-width dependence (between 125 and 450 Å) of electron-optical-phonon interactions in GaAs/AlGaAs multiple-quantum-wells is described. The 1s-2p+ transition of well-center donors has been tuned through resonances with GaAs optical phonons by magnetic fields up to 23.5 T and followed with far infrared photoconductivity spectroscopy. Extremely large and asymmetric interaction gaps have been observed in both the two-level and three-level resonance regions for small well-width samples; these gaps decrease systematically asthe well-width increases, indicating weaker interactions for larger well-width samples.
| Original language | English |
|---|---|
| Pages (from-to) | 488-492 |
| Number of pages | 5 |
| Journal | Surface Science |
| Volume | 267 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - 1992 |
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