Improvement of QDIP performance due to quantum dots with built-in charge

The charging of quantum dots provides two strong effects which improve Quantum Dot Infrared Photodetector (QDIP) performance. First, electrons placed in the quantum dots enhance IR-induced transitions and increase electron coupling to IR radiation. Second, the built-in-dot charge creates potential barriers around dots and these barriers strongly suppress the photoelectron capture and exponentially increase the photoelectron lifetime. Both effects enhance the IR photoresponse. Long photoelectron lifetime decreases the generation-recombination noise and increases the device sensitivity. To investigate the potential profiles around charged dots, we used the nextnano3 software which allows for simulation of multilayer structures combined with realistic geometries in one, two, and three spatial dimensions. In weak electric fields the photoelectron kinetics and transport in the potential created by charged dots have been studied analytically. In strong fields the results were based on Monte-Carlo modeling. The effects of dot charging have been investigated in QD structures which were fabricated using molecular beam epitaxy. InAs quantum dots were grown on AlGaAs surfaces by deposition of approximately 2.1 monolayers of InAs. In the obtained structures the dot charging is realized via intra-dot and inter-dot doping. The increase in photoresponse due to dot charging is in good agreement with the model which takes into account anisotropy of potential barriers around QDs in QD layers.