Improvement of metal-semiconductor contact from schottky to ohmic by Cu doping in transition metal dichalcogenide transistors

Maomao Liu; Simran Shahi; Sara Fathipour; Wansik Hwang; Maja Remskar; Alan Seabaugh; Huamin Li

doi:10.1109/NMDC.2018.8605891

Improvement of metal-semiconductor contact from schottky to ohmic by Cu doping in transition metal dichalcogenide transistors

Maomao Liu
, Simran Shahi
, Sara Fathipour
, Wansik Hwang
, Maja Remskar
, Alan Seabaugh
, Huamin Li

Department of Electrical Engineering

SUNY Buffalo
University of Notre Dame
Korea Aerospace University
Jožef Stefan Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Metal-semiconductor (MS) contacts were changed from Schottky to Ohmic in synthesized tungsten disulfide (WS ₂ ), due to Cu doping during the synthesis. Significant reductions of contact barrier and resistance were achieved. A statistical study shows transistor performance including carrier mobilities, on/off ratios, on-current densities, and subthreshold swings were also improved significantly with Cu doping.

Original language	English
Title of host publication	2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538610169
DOIs	https://doi.org/10.1109/NMDC.2018.8605891
State	Published - Jan 8 2019
Event	13th IEEE Nanotechnology Materials and Devices Conference, NMDC 2018 - Portland, United States Duration: Oct 14 2018 → Oct 17 2018

Publication series

Name	2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018

Conference

Conference	13th IEEE Nanotechnology Materials and Devices Conference, NMDC 2018
Country/Territory	United States
City	Portland
Period	10/14/18 → 10/17/18

Access to Document

10.1109/NMDC.2018.8605891

Cite this

Liu, M., Shahi, S., Fathipour, S., Hwang, W., Remskar, M., Seabaugh, A., & Li, H. (2019). Improvement of metal-semiconductor contact from schottky to ohmic by Cu doping in transition metal dichalcogenide transistors. In 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018 Article 8605891 (2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NMDC.2018.8605891

Liu, Maomao ; Shahi, Simran ; Fathipour, Sara et al. / Improvement of metal-semiconductor contact from schottky to ohmic by Cu doping in transition metal dichalcogenide transistors. 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018. Institute of Electrical and Electronics Engineers Inc., 2019. (2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018).

@inproceedings{02101923b6a34fc7bae875bd0cdbc532,

title = "Improvement of metal-semiconductor contact from schottky to ohmic by Cu doping in transition metal dichalcogenide transistors",

abstract = " Metal-semiconductor (MS) contacts were changed from Schottky to Ohmic in synthesized tungsten disulfide (WS 2 ), due to Cu doping during the synthesis. Significant reductions of contact barrier and resistance were achieved. A statistical study shows transistor performance including carrier mobilities, on/off ratios, on-current densities, and subthreshold swings were also improved significantly with Cu doping.",

author = "Maomao Liu and Simran Shahi and Sara Fathipour and Wansik Hwang and Maja Remskar and Alan Seabaugh and Huamin Li",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 13th IEEE Nanotechnology Materials and Devices Conference, NMDC 2018 ; Conference date: 14-10-2018 Through 17-10-2018",

year = "2019",

month = jan,

day = "8",

doi = "10.1109/NMDC.2018.8605891",

language = "English",

series = "2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018",

address = "United States",

}

Liu, M, Shahi, S, Fathipour, S, Hwang, W, Remskar, M, Seabaugh, A & Li, H 2019, Improvement of metal-semiconductor contact from schottky to ohmic by Cu doping in transition metal dichalcogenide transistors. in 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018., 8605891, 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018, Institute of Electrical and Electronics Engineers Inc., 13th IEEE Nanotechnology Materials and Devices Conference, NMDC 2018, Portland, United States, 10/14/18. https://doi.org/10.1109/NMDC.2018.8605891

Improvement of metal-semiconductor contact from schottky to ohmic by Cu doping in transition metal dichalcogenide transistors. / Liu, Maomao; Shahi, Simran; Fathipour, Sara et al.
2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018. Institute of Electrical and Electronics Engineers Inc., 2019. 8605891 (2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improvement of metal-semiconductor contact from schottky to ohmic by Cu doping in transition metal dichalcogenide transistors

AU - Liu, Maomao

AU - Shahi, Simran

AU - Fathipour, Sara

AU - Hwang, Wansik

AU - Remskar, Maja

AU - Seabaugh, Alan

AU - Li, Huamin

PY - 2019/1/8

Y1 - 2019/1/8

N2 - Metal-semiconductor (MS) contacts were changed from Schottky to Ohmic in synthesized tungsten disulfide (WS 2 ), due to Cu doping during the synthesis. Significant reductions of contact barrier and resistance were achieved. A statistical study shows transistor performance including carrier mobilities, on/off ratios, on-current densities, and subthreshold swings were also improved significantly with Cu doping.

AB - Metal-semiconductor (MS) contacts were changed from Schottky to Ohmic in synthesized tungsten disulfide (WS 2 ), due to Cu doping during the synthesis. Significant reductions of contact barrier and resistance were achieved. A statistical study shows transistor performance including carrier mobilities, on/off ratios, on-current densities, and subthreshold swings were also improved significantly with Cu doping.

UR - https://www.scopus.com/pages/publications/85061830924

U2 - 10.1109/NMDC.2018.8605891

DO - 10.1109/NMDC.2018.8605891

M3 - Conference contribution

AN - SCOPUS:85061830924

T3 - 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018

BT - 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 13th IEEE Nanotechnology Materials and Devices Conference, NMDC 2018

Y2 - 14 October 2018 through 17 October 2018

ER -

Liu M, Shahi S, Fathipour S, Hwang W, Remskar M, Seabaugh A et al. Improvement of metal-semiconductor contact from schottky to ohmic by Cu doping in transition metal dichalcogenide transistors. In 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018. Institute of Electrical and Electronics Engineers Inc. 2019. 8605891. (2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018). doi: 10.1109/NMDC.2018.8605891

Improvement of metal-semiconductor contact from schottky to ohmic by Cu doping in transition metal dichalcogenide transistors

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this