@inproceedings{ad6f324f08aa4c21a033c0643924d3c2,
title = "Imaging local transport property within MoS2 transistors by scanning gate microscopy",
abstract = "Using scanning gate microscopy (SGM), we study local transport property of molybdenum disulfide (MoS2) transistors. The transistors were fabricated using domain-free monolayer-MoS2 crystals grown by chemical vapor deposition (CVD). We observed two different types of SGM responses in different transistors. One is observed along the contact edge and the other is observed within MoS2 channel. The former one is described as visualization of an injection barrier formed by ohmic contact. On the other hand, the latter one implies that there is a barrier at a boundary of two regions having a different electrical property. We will discuss these results including electron force microscopy and photoluminescence mapping in the presentation.",
keywords = "field effect transistor, Molybdeum disulfides, scanning gate microscopy",
author = "Masahiro Matsunaga and Ayaka Higuchi and Guanchen He and Bird, \{Jonathan P.\} and Yuichi Ochiai and Nobuyuki Aoki",
note = "Publisher Copyright: {\"i}¿½ 2016 IEEE.; 2016 Compound Semiconductor Week, CSW 2016 ; Conference date: 26-06-2016 Through 30-06-2016",
year = "2016",
month = aug,
day = "1",
doi = "10.1109/ICIPRM.2016.7528808",
language = "English",
series = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016",
address = "United States",
}