Abstract
A modified carrier collection model of a-Si:H Schottky-barrier solar cells is proposed to explain the falloff of short wavelength carrier collection efficiency. Schottky-barrier lowering due to image force effects alters the potential distribution near the metal-semiconductor interface. This altered potential decreases the carrier collection in a-Si:H solar cells by as much as 30%. Design considerations to improve carrier collection efficiency are also proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 325-327 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 39 |
| Issue number | 4 |
| DOIs | |
| State | Published - 1981 |
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