@inproceedings{890fdb8c366049d98cbcd5a6de0e3abc,
title = "III-V/Ge channel engineering for future CMOS",
abstract = "As silicon CMOS reaches its scaling limits, alternative materials become more attractive. Dielectric thickness and parasitic resistance and capacitance do not scale well, so {"}more than Moore{"} scaling is required even to keep up with Moore's Law. Replacing Si MOSFET channels on a short time scale (3-6 years) raises significant challenges for any proposed material or device structure. New materials must be compatible with Si CMOS fabrication. In 1-XGaXAs based MOSFETs offer higher carrier velocities than Si, plus contact resistivities below 10-8Ω-cm2, mature processing, and straightforward heterostructure confinement for vertical scaling, and additional degrees of freedom in composition and heterostructure for future scaling. Self-aligned source-drain regrowth places contact metal within 30nm of the channel, reducing access resistance. Here we demonstrate InGaAs channels with self-aligned regrowth of source/drain contacts. This work led to depletion mode InGaAs MOSFETs with peak transconductance of 0.24 mS/μm.",
author = "Wistey, \{M. A.\} and U. Singisetti and Burek, \{G. J.\} and E. Kim and Thibeault, \{B. J.\} and A. Nelson and J. Cagnon and Lee, \{Y. J.\} and Bank, \{S. R.\} and S. Stemmer and McIntyre, \{P. C.\} and Gossard, \{A. C.\} and Rodwell, \{M. J.W.\}",
year = "2009",
doi = "10.1149/1.3119559",
language = "English",
isbn = "9781566777131",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "361--372",
booktitle = "ECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications",
address = "United States",
edition = "5",
note = "1st International Symposium on Emerging Materials for Post-CMOS Applications - 215th Meeting of the Electrochemical Society ; Conference date: 25-05-2009 Through 29-05-2009",
}