@inproceedings{2262dd63fb2145c7831955d5dadf4f2d,
title = "III-V MOSFETs: Scaling laws, scaling limits, fabrication processes",
abstract = "III-V FETs are in development for both THz and VLSI applications. In VLSI, high drive currents are sought at low gate drive voltages, while in THz circuits, high cutoff frequencies are required. In both cases, source and drain access resistivities must be decreased, and transconductance and drain current per unit gate width must be increased by reducing the gate dielectric thickness, reducing the inversion layer depth, and increasing the channel 2-DEG density of states. We here describe both nm self-aligned fabrication processes and channel designs to address these scaling limits.",
author = "Rodwell, \{M. J.W.\} and U. Singisetti and M. Wistey and Burek, \{G. J.\} and A. Carter and A. Baraskar and J. Law and Thibeault, \{B. J.\} and Kim, \{Eun Ji\} and B. Shin and Lee, \{Yong Ju\} and S. Steiger and S. Lee and H. Ryu and Y. Tan and G. Hegde and L. Wang and E. Chagarov and Gossard, \{A. C.\} and W. Frensley and A. Kummel and C. Palmstr{\o}m and McIntyre, \{Paul C.\} and T. Boykin and G. Klimek and P. Asbeck",
year = "2010",
doi = "10.1109/ICIPRM.2010.5515914",
language = "English",
isbn = "9781424459209",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "25--30",
booktitle = "2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings",
note = "22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 ; Conference date: 31-05-2010 Through 04-06-2010",
}