Abstract
Local structures around Mn in (Formula presented)(Formula presented)As films grown by molecular-beam epitaxy have been studied by using Mn K-edge extended x-ray-absorption fine-structure (EXAFS) technique. Substitution of Mn atoms for the In sites is found in samples either grown at low substrate temperatures (near 200 °C) or with a low Mn concentration (about 1 at. %). This result represents a significant extension of an earlier EXAFS study and serves as direct experimental evidence for III-V diluted magnetic semiconductors obtained by substitutional doping of Mn impurities in InAs.
| Original language | English |
|---|---|
| Pages (from-to) | 4905-4909 |
| Number of pages | 5 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 53 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1996 |
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