I-V Characteristics for Silicon Schottky Solar Cells

Wayne A. Anderson; R. A. Milano

doi:10.1109/PROC.1975.9727

I-V Characteristics for Silicon Schottky Solar Cells

Wayne A. Anderson
, R. A. Milano

Department of Electrical Engineering

Rutgers - The State University of New Jersey, New Brunswick

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

A special-layered Schottky solar cell has been constructed which produces 9.5-percent sunlight efficiency over a 1-cm² area. This solar cell has a fill factor of 0.60 compared to 0.58 for a commercial p-n silicon cell. Series resistance of 5 Ω is shown to reduce the theoretical fill factor from 0.67 to 0.42 for a Schottky cell. The diode quality factor n is shown to significantly increase open-circuit voltage and yet not appreciably influence the fill factor.

Original language	English
Pages (from-to)	206-208
Number of pages	3
Journal	Proceedings of the IEEE
Volume	63
Issue number	1
DOIs	https://doi.org/10.1109/PROC.1975.9727
State	Published - Jan 1975

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title = "I-V Characteristics for Silicon Schottky Solar Cells",

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AB - A special-layered Schottky solar cell has been constructed which produces 9.5-percent sunlight efficiency over a 1-cm2 area. This solar cell has a fill factor of 0.60 compared to 0.58 for a commercial p-n silicon cell. Series resistance of 5 Ω is shown to reduce the theoretical fill factor from 0.67 to 0.42 for a Schottky cell. The diode quality factor n is shown to significantly increase open-circuit voltage and yet not appreciably influence the fill factor.

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I-V Characteristics for Silicon Schottky Solar Cells

Abstract

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