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Hyperfine interactions in silicon quantum dots

  • Lucy V.C. Assali
  • , Helena M. Petrilli
  • , Rodrigo B. Capaz
  • , Belita Koiller
  • , Xuedong Hu
  • , S. Das Sarma
  • Universidade de São Paulo
  • Universidade Federal do Rio de Janeiro
  • University of Maryland, College Park

Research output: Contribution to journalArticlepeer-review

99 Scopus citations

Abstract

A fundamental interaction for electrons is their hyperfine interaction (HFI) with nuclear spins. HFI is well characterized in free atoms and molecules, and is crucial for purposes from chemical identification of atoms to trapped ion quantum computing. However, electron wave functions near atomic sites, therefore HFI, are often not accurately known in solids. Here we perform an all-electron calculation for conduction electrons in silicon and obtain reliable information on HFI. We verify the outstanding quantum spin coherence in Si, which is critical for fault-tolerant solid state quantum computing.

Original languageEnglish
Article number165301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number16
DOIs
StatePublished - Apr 4 2011

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