Hydrogen-induced degradation in epitaxial and polycrystalline (Ba,Sr)TiO 3 thin films

Jang Sik Lee; Y. Li; Y. Lin; Sang Yeol Lee; Q. X. Jia

doi:10.1063/1.1745105

Hydrogen-induced degradation in epitaxial and polycrystalline (Ba,Sr)TiO ₃ thin films

Jang Sik Lee
, Y. Li
, Y. Lin
, Sang Yeol Lee
, Q. X. Jia

Department of Materials Design and Innovation

Los Alamos National Laboratory Materials Science and Technology Division
Yonsei University

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The hydrogen-induced degradation in epitaxial and polycrystalline (Ba,Sr) TiO ₃ (BST) thin films prepared on SrRuO ₃ was studied. The polycrystalline BST was deposited on SrRuO ₃ (SRO)/SiO _x/Si. The dielectric response and leakage current characteristics before and after annealing in forming gas at 450°C was measured. It was found that the epitaxial BST films were highly immune to hydrogen degration, and the grain boundary was one of the main sources of hydrogen-induced degradation.

Original language	English
Pages (from-to)	3825-3827
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	19
DOIs	https://doi.org/10.1063/1.1745105
State	Published - May 10 2004

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title = "Hydrogen-induced degradation in epitaxial and polycrystalline (Ba,Sr)TiO 3 thin films",

abstract = "The hydrogen-induced degradation in epitaxial and polycrystalline (Ba,Sr) TiO 3 (BST) thin films prepared on SrRuO 3 was studied. The polycrystalline BST was deposited on SrRuO 3 (SRO)/SiO x/Si. The dielectric response and leakage current characteristics before and after annealing in forming gas at 450°C was measured. It was found that the epitaxial BST films were highly immune to hydrogen degration, and the grain boundary was one of the main sources of hydrogen-induced degradation.",

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year = "2004",

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doi = "10.1063/1.1745105",

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T1 - Hydrogen-induced degradation in epitaxial and polycrystalline (Ba,Sr)TiO 3 thin films

AU - Lee, Jang Sik

AU - Li, Y.

AU - Lin, Y.

AU - Lee, Sang Yeol

AU - Jia, Q. X.

PY - 2004/5/10

Y1 - 2004/5/10

N2 - The hydrogen-induced degradation in epitaxial and polycrystalline (Ba,Sr) TiO 3 (BST) thin films prepared on SrRuO 3 was studied. The polycrystalline BST was deposited on SrRuO 3 (SRO)/SiO x/Si. The dielectric response and leakage current characteristics before and after annealing in forming gas at 450°C was measured. It was found that the epitaxial BST films were highly immune to hydrogen degration, and the grain boundary was one of the main sources of hydrogen-induced degradation.

AB - The hydrogen-induced degradation in epitaxial and polycrystalline (Ba,Sr) TiO 3 (BST) thin films prepared on SrRuO 3 was studied. The polycrystalline BST was deposited on SrRuO 3 (SRO)/SiO x/Si. The dielectric response and leakage current characteristics before and after annealing in forming gas at 450°C was measured. It was found that the epitaxial BST films were highly immune to hydrogen degration, and the grain boundary was one of the main sources of hydrogen-induced degradation.

UR - https://www.scopus.com/pages/publications/2942608044

U2 - 10.1063/1.1745105

DO - 10.1063/1.1745105

M3 - Article

AN - SCOPUS:2942608044

SN - 0003-6951

VL - 84

SP - 3825

EP - 3827

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Hydrogen-induced degradation in epitaxial and polycrystalline (Ba,Sr)TiO ₃ thin films

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