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Hot phonons contribution to scattering rates in single-walled carbon nanotubes

  • SUNY Buffalo
  • Alexandria University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The influence of hot phonons on the electron-phonon scattering rates is studied via an Ensemble Monte Carlo(EMC) simulation with step by step update of the phonon occupation number to account for the generation of hot phonons in metallic armchair (10, 10) carbon nanotubes. EMC simulations are carried out at different temperatures ranging from 300 to 1800 K and at electric field forces ranging from 5KV/cm to 20 KV/cm. The energy dispersion relation is calculated using a tight binding formulation while the phonon dispersion relation is calculated using the Fourth nearest neighbor interactions between atoms. The hot phonon contribution to the scattering rates appears to be a function of applied electric force field at room temperature, while it becomes independent of the applied electric force field for higher temperatures.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Pages572-575
Number of pages4
StatePublished - 2013
EventNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States
Duration: May 12 2013 → May 16 2013

Publication series

NameTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volume2

Conference

ConferenceNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Country/TerritoryUnited States
CityWashington, DC
Period05/12/13 → 05/16/13

Keywords

  • Carbon nanotubes
  • Electron-phonon scattering rates
  • Hot phonon effect
  • Monte Carlo simulation
  • Semi-classical transport

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