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Hot-phonon effects on electron transport in quantum wires

  • R. Mickevičius
  • , V. Mitin
  • , G. Paulavičius
  • , V. Kochelap
  • , M. A. Stroscio
  • , G. J. Iafrate
  • Wayne State University
  • NASU - Institute of Semiconductors Physics
  • United States Army Research Office

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Hot (nonequilibrium) phonon effects on electron transport in rectangular GaAs/AlAs quantum wires have been investigated by a self-consistent Monte Carlo simulation. Confinement and localization of optical phonons have been taken into account. We have demonstrated that at room temperature hot optical phonons lead to a significant increase in electron drift velocity. This hot-phonon drag effect is due to the strongly asymmetric nonequilibrium phonon distribution. As a result, phonon absorption for forward transitions (electron gains momentum along electric field) is enhanced, whereas absorption for backward transitions (electron gains momentum against electric field) is suppressed. At low temperatures diffusive heating of electrons by hot phonons dominates over hot-phonon drag and the electron drift velocity decreases.

Original languageEnglish
Pages (from-to)5145-5149
Number of pages5
JournalJournal of Applied Physics
Volume80
Issue number9
DOIs
StatePublished - Nov 1 1996

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