TY - GEN
T1 - Hot electron microbolometers based on GaN heterostructures for THz applications
AU - Ramaswamy, R.
AU - Wang, K.
AU - Muraviev, A.
AU - Gaska, R.
AU - Yang, J.
AU - Sergeev, A.
AU - Olac-Vaw, R.
AU - Mitin, V.
PY - 2011
Y1 - 2011
N2 - Microbolometers based on two dimensional electron gas (2DEG) medium in GaN semiconductor were fabricated and characterized. Low contact resistance (below 0.5 Ω·mm) achieved in our devices ensures that the THz voltage primarily drops across the active region. Due to small electron momentum relaxation time, the inductive part of the impedance in our devices is small, so these sensors can be combined with standard antennas or waveguides. Optical transmission measurements of the GaN heterostructures indicate that the 2DEG has significant coupling to the THz radiation due to Drude absorption up to frequencies well above 3 THz (100 cm -1) caused by high electron concentration (∼1-4 × 10 13 cm -2) and short momentum relaxation time (∼10 -12 sec). The normalized terahertz responsivity level defined as (dJ/J)/P is estimated to be 1.2×10 -2 W -1 at 1.84 THz with dR/dT of ∼3Ω/K at room temperature in our device.
AB - Microbolometers based on two dimensional electron gas (2DEG) medium in GaN semiconductor were fabricated and characterized. Low contact resistance (below 0.5 Ω·mm) achieved in our devices ensures that the THz voltage primarily drops across the active region. Due to small electron momentum relaxation time, the inductive part of the impedance in our devices is small, so these sensors can be combined with standard antennas or waveguides. Optical transmission measurements of the GaN heterostructures indicate that the 2DEG has significant coupling to the THz radiation due to Drude absorption up to frequencies well above 3 THz (100 cm -1) caused by high electron concentration (∼1-4 × 10 13 cm -2) and short momentum relaxation time (∼10 -12 sec). The normalized terahertz responsivity level defined as (dJ/J)/P is estimated to be 1.2×10 -2 W -1 at 1.84 THz with dR/dT of ∼3Ω/K at room temperature in our device.
UR - https://www.scopus.com/pages/publications/84862935246
U2 - 10.1109/irmmw-THz.2011.6105191
DO - 10.1109/irmmw-THz.2011.6105191
M3 - Conference contribution
AN - SCOPUS:84862935246
SN - 9781457705090
T3 - IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves
BT - IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves
T2 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011
Y2 - 2 October 2011 through 7 October 2011
ER -