Hot carrier electroluminescence from a single carbon nanotube

Marcus Freitag; Vasili Perebeinos; Jia Chen; Aaron Stein; James C. Tsang; James A. Misewich; Richard Martel; Phaedon Avouris

doi:10.1021/nl049607u

Hot carrier electroluminescence from a single carbon nanotube

Marcus Freitag
, Vasili Perebeinos
, Jia Chen
, Aaron Stein
, James C. Tsang
, James A. Misewich
, Richard Martel
, Phaedon Avouris

Department of Electrical Engineering

IBM
Inc.
Brookhaven National Laboratory
University of Montreal

Research output: Contribution to journal › Article › peer-review

167 Scopus citations

Abstract

We measure the spectrum and efficiency of the infrared light emission from ambipolar carbon nanotube field-effect transistors. The width of the emission peak is strongly device-structure dependent. Long devices (∼50 μm) show narrow spectral peaks that we attribute to relaxed carrier recombination, while short devices (∼500 nm) show broad peaks due to hot carrier recombination. The hot carrier distribution is limited to energies below the energies of the optical/zone boundary phonons near 180 meV. The efficiency of the radiative recombination is between 10^-6 and 10^-7 photons/electron-hole pair, and the possible quenching mechanisms are discussed.

Original language	English
Pages (from-to)	1063-1066
Number of pages	4
Journal	Nano Letters
Volume	4
Issue number	6
DOIs	https://doi.org/10.1021/nl049607u
State	Published - Jun 2004

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10.1021/nl049607u

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title = "Hot carrier electroluminescence from a single carbon nanotube",

abstract = "We measure the spectrum and efficiency of the infrared light emission from ambipolar carbon nanotube field-effect transistors. The width of the emission peak is strongly device-structure dependent. Long devices (∼50 μm) show narrow spectral peaks that we attribute to relaxed carrier recombination, while short devices (∼500 nm) show broad peaks due to hot carrier recombination. The hot carrier distribution is limited to energies below the energies of the optical/zone boundary phonons near 180 meV. The efficiency of the radiative recombination is between 10-6 and 10-7 photons/electron-hole pair, and the possible quenching mechanisms are discussed.",

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T1 - Hot carrier electroluminescence from a single carbon nanotube

AU - Freitag, Marcus

AU - Perebeinos, Vasili

AU - Chen, Jia

AU - Stein, Aaron

AU - Tsang, James C.

AU - Misewich, James A.

AU - Martel, Richard

AU - Avouris, Phaedon

PY - 2004/6

Y1 - 2004/6

N2 - We measure the spectrum and efficiency of the infrared light emission from ambipolar carbon nanotube field-effect transistors. The width of the emission peak is strongly device-structure dependent. Long devices (∼50 μm) show narrow spectral peaks that we attribute to relaxed carrier recombination, while short devices (∼500 nm) show broad peaks due to hot carrier recombination. The hot carrier distribution is limited to energies below the energies of the optical/zone boundary phonons near 180 meV. The efficiency of the radiative recombination is between 10-6 and 10-7 photons/electron-hole pair, and the possible quenching mechanisms are discussed.

AB - We measure the spectrum and efficiency of the infrared light emission from ambipolar carbon nanotube field-effect transistors. The width of the emission peak is strongly device-structure dependent. Long devices (∼50 μm) show narrow spectral peaks that we attribute to relaxed carrier recombination, while short devices (∼500 nm) show broad peaks due to hot carrier recombination. The hot carrier distribution is limited to energies below the energies of the optical/zone boundary phonons near 180 meV. The efficiency of the radiative recombination is between 10-6 and 10-7 photons/electron-hole pair, and the possible quenching mechanisms are discussed.

UR - https://www.scopus.com/pages/publications/3042794973

U2 - 10.1021/nl049607u

DO - 10.1021/nl049607u

M3 - Article

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SN - 1530-6984

VL - 4

SP - 1063

EP - 1066

JO - Nano Letters

JF - Nano Letters

IS - 6

ER -

Hot carrier electroluminescence from a single carbon nanotube

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