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Hot-carrier effects in type II heterostructures

  • Louise C. Hirst
  • , Michael K. Yakes
  • , Chaffra A. Affouda
  • , Christopher G. Bailey
  • , Joseph G. Tischler
  • , Hamidreza Esmaielpour
  • , Vincent R. Whiteside
  • , Ian R. Sellers
  • , Matthew P. Lumb
  • , David V. Forbes
  • , Robert J. Walters
  • Naval Research Laboratory
  • Old Dominion University
  • University of Oklahoma
  • George Washington University
  • Rochester Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Hot-carrier solar cells have high theoretical limiting efficiency however, absorber materials with slow carrier thermalization remain a development barrier for these devices. In previous studies, charge separation in core-shell colloidal quantum dots has been shown to result in slow carrier relaxation. Charge separation also occurs in III-V heterostructures with type-II band alignments. We characterize hot-carrier effects in InAlAs/InP and InAlAs/InGaAsP quantum well structures, with type-II and quasi-type-II band alignments respectively. InGaAsP is identified as a promising hot-carrier absorber candidate, with thermalization coefficient 1.77±0.12 W.K-1.cm-2, corresponding to limiting solar conversion efficiency >42%, under 2000X.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015 → Jun 19 2015

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans
Period06/14/15 → 06/19/15

Keywords

  • Hot-carrier solar cell
  • InGaAsP
  • InP
  • type II band alignment

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