HOT-CARRIER DISTRIBUTION FUNCTION AND CONDUCTIVITY IN SEMICONDUCTORS WITH DEGENERATE BANDS.

It is demonstrated that, in the case of predominance of quasielastic scattering mechanisms, the light and heavy holes are heated to the same extent by the interband scattering and there is no interband redistribution. Energy is acquired from the field by holes of both kinds is transferred to the lattice by the heavy holes. The relative contributions of the light and heavy holes to the conductivity are not affected by heating. Since the mobility of the light holes is high compared with that of the heavy holes, the former make a contribution to the conductivity anisotropy which is of the same order as the conductivity itself, in spite of the fact that minus K//1 less than less than K//2.