Highly sensitive photodetector using porous silicon

J. P. Zheng; K. L. Jiao; W. P. Shen; W. A. Anderson; H. S. Kwok

doi:10.1063/1.107884

Highly sensitive photodetector using porous silicon

J. P. Zheng
, K. L. Jiao
, W. P. Shen
, W. A. Anderson
, H. S. Kwok

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

200 Scopus citations

Abstract

A highly sensitive photodetector was made with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630-900 nm without any antireflective coating. The detector response time was about 2 ns with a 9 V reverse bias. The possible mechanisms are discussed.

Original language	English
Pages (from-to)	459-461
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	4
DOIs	https://doi.org/10.1063/1.107884
State	Published - 1992

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title = "Highly sensitive photodetector using porous silicon",

abstract = "A highly sensitive photodetector was made with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630-900 nm without any antireflective coating. The detector response time was about 2 ns with a 9 V reverse bias. The possible mechanisms are discussed.",

author = "Zheng, \{J. P.\} and Jiao, \{K. L.\} and Shen, \{W. P.\} and Anderson, \{W. A.\} and Kwok, \{H. S.\}",

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pages = "459--461",

journal = "Applied Physics Letters",

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AU - Jiao, K. L.

AU - Shen, W. P.

AU - Anderson, W. A.

AU - Kwok, H. S.

PY - 1992

Y1 - 1992

N2 - A highly sensitive photodetector was made with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630-900 nm without any antireflective coating. The detector response time was about 2 ns with a 9 V reverse bias. The possible mechanisms are discussed.

AB - A highly sensitive photodetector was made with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630-900 nm without any antireflective coating. The detector response time was about 2 ns with a 9 V reverse bias. The possible mechanisms are discussed.

UR - https://www.scopus.com/pages/publications/31644442415

U2 - 10.1063/1.107884

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M3 - Article

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SN - 0003-6951

VL - 61

SP - 459

EP - 461

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Highly sensitive photodetector using porous silicon

Abstract

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