Highly polarized emission from electrical spin injection into an InGaAs quantum well with free carriers

C. H. Li; G. Kioseoglou; A. Petrou; M. Korkusinski; P. Hawrylak; B. T. Jonker

doi:10.1063/1.4832460

Highly polarized emission from electrical spin injection into an InGaAs quantum well with free carriers

C. H. Li
, G. Kioseoglou
, A. Petrou
, M. Korkusinski
, P. Hawrylak
, B. T. Jonker

Physics

Naval Research Laboratory
University of Crete
National Research Council of Canada

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report on a highly polarized emission from InGaAs/GaAs-quantum well light-emitting diodes in which we inject spin-polarized electrons from an Fe/Schottky contact. The emission spectra consist of the e₁h ₁ free exciton (FX) and a feature 12 meV below FX attributed to band-to-band (BB) recombination. The FX exhibits a maximum circular polarization of 22%, with a magnetic-field dependence characteristic of spin injection from Fe. The BB emission on the other hand exhibits a polarization that is strongly bias and temperature dependent, with intriguing magnetic-field dependence: The polarization exhibits a maximum of 78% at 2.5 T and 2 K, then decreases linearly with field and reaches -78% at 7 T, attributed to magnetic-field dependent spin relaxation in the presence of excess electrons.

Original language	English
Article number	212403
Journal	Applied Physics Letters
Volume	103
Issue number	21
DOIs	https://doi.org/10.1063/1.4832460
State	Published - Nov 18 2013

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title = "Highly polarized emission from electrical spin injection into an InGaAs quantum well with free carriers",

abstract = "We report on a highly polarized emission from InGaAs/GaAs-quantum well light-emitting diodes in which we inject spin-polarized electrons from an Fe/Schottky contact. The emission spectra consist of the e1h 1 free exciton (FX) and a feature 12 meV below FX attributed to band-to-band (BB) recombination. The FX exhibits a maximum circular polarization of 22\%, with a magnetic-field dependence characteristic of spin injection from Fe. The BB emission on the other hand exhibits a polarization that is strongly bias and temperature dependent, with intriguing magnetic-field dependence: The polarization exhibits a maximum of 78\% at 2.5 T and 2 K, then decreases linearly with field and reaches -78\% at 7 T, attributed to magnetic-field dependent spin relaxation in the presence of excess electrons.",

author = "Li, \{C. H.\} and G. Kioseoglou and A. Petrou and M. Korkusinski and P. Hawrylak and Jonker, \{B. T.\}",

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doi = "10.1063/1.4832460",

language = "English",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Highly polarized emission from electrical spin injection into an InGaAs quantum well with free carriers

AU - Li, C. H.

AU - Kioseoglou, G.

AU - Petrou, A.

AU - Korkusinski, M.

AU - Hawrylak, P.

AU - Jonker, B. T.

PY - 2013/11/18

Y1 - 2013/11/18

N2 - We report on a highly polarized emission from InGaAs/GaAs-quantum well light-emitting diodes in which we inject spin-polarized electrons from an Fe/Schottky contact. The emission spectra consist of the e1h 1 free exciton (FX) and a feature 12 meV below FX attributed to band-to-band (BB) recombination. The FX exhibits a maximum circular polarization of 22%, with a magnetic-field dependence characteristic of spin injection from Fe. The BB emission on the other hand exhibits a polarization that is strongly bias and temperature dependent, with intriguing magnetic-field dependence: The polarization exhibits a maximum of 78% at 2.5 T and 2 K, then decreases linearly with field and reaches -78% at 7 T, attributed to magnetic-field dependent spin relaxation in the presence of excess electrons.

AB - We report on a highly polarized emission from InGaAs/GaAs-quantum well light-emitting diodes in which we inject spin-polarized electrons from an Fe/Schottky contact. The emission spectra consist of the e1h 1 free exciton (FX) and a feature 12 meV below FX attributed to band-to-band (BB) recombination. The FX exhibits a maximum circular polarization of 22%, with a magnetic-field dependence characteristic of spin injection from Fe. The BB emission on the other hand exhibits a polarization that is strongly bias and temperature dependent, with intriguing magnetic-field dependence: The polarization exhibits a maximum of 78% at 2.5 T and 2 K, then decreases linearly with field and reaches -78% at 7 T, attributed to magnetic-field dependent spin relaxation in the presence of excess electrons.

UR - https://www.scopus.com/pages/publications/84888412564

U2 - 10.1063/1.4832460

DO - 10.1063/1.4832460

M3 - Article

AN - SCOPUS:84888412564

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212403

ER -

Highly polarized emission from electrical spin injection into an InGaAs quantum well with free carriers

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