TY - GEN
T1 - High-speed microwave thin-film transistors based on transferrable semiconductor nanomembranes
AU - Seo, Jung Hun
AU - Zhou, Weidong
AU - Ma, Zhenqiang
PY - 2012
Y1 - 2012
N2 - This paper covers the aspects of material preparation, device fabrication, and process integration using transferrable monocrystalline silicon (Si) nanomembranes (NM) for flexible electronics operating in high frequency domain. Methods of releasing Si NM from silicon-on-insulator (SOI) source substrates and transferring it to flexible substrates are briefly described. The evolvement of radio frequency (RF) flexible Si thin-film transistors (TFT) structures is described in detail. The continuous performance enhancement of TFTs owning to process and TFT structure innovations is analyzed. Due to the intrinsic similarity between flexible monocrystalline Si nanomembrane based devices and the commercial rigid Si devices, effectively adopting the mature techniques used in rigid semiconductor industry is promising to boost flexible device performance in the future.
AB - This paper covers the aspects of material preparation, device fabrication, and process integration using transferrable monocrystalline silicon (Si) nanomembranes (NM) for flexible electronics operating in high frequency domain. Methods of releasing Si NM from silicon-on-insulator (SOI) source substrates and transferring it to flexible substrates are briefly described. The evolvement of radio frequency (RF) flexible Si thin-film transistors (TFT) structures is described in detail. The continuous performance enhancement of TFTs owning to process and TFT structure innovations is analyzed. Due to the intrinsic similarity between flexible monocrystalline Si nanomembrane based devices and the commercial rigid Si devices, effectively adopting the mature techniques used in rigid semiconductor industry is promising to boost flexible device performance in the future.
UR - https://www.scopus.com/pages/publications/84874855436
U2 - 10.1109/ICSICT.2012.6467577
DO - 10.1109/ICSICT.2012.6467577
M3 - Conference contribution
AN - SCOPUS:84874855436
SN - 9781467324724
T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Y2 - 29 October 2012 through 1 November 2012
ER -