High-reflection Si/SiO2 Bragg reflector via membrane transfer printing

Minkyu Cho; Jung Hun Seo; Jaeseong Lee; Deyin Zhao; Weidong Zhou; Zhenqiang Ma

doi:10.1109/PHOSST.2015.7248261

High-reflection Si/SiO₂ Bragg reflector via membrane transfer printing

Minkyu Cho
, Jung Hun Seo
, Jaeseong Lee
, Deyin Zhao
, Weidong Zhou
, Zhenqiang Ma

Department of Materials Design and Innovation

University of Wisconsin-Madison
University of Texas at Arlington

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

High reflection Si/SiO₂ quarter-wavelength Distributed Bragg Reflector (DBR) is reported. The structure is composed of alternate single crystal Si and thermally-grown SiO2. Si Nanomembrane (Si NM) transfer and subsequent thermal oxidation achieves high reflection throughout the broad IR spectrum.

Original language	English
Title of host publication	2015 IEEE Summer Topicals Meeting Series, SUM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	193-195
Number of pages	3
ISBN (Electronic)	9781479974689
DOIs	https://doi.org/10.1109/PHOSST.2015.7248261
State	Published - Sep 9 2015
Event	IEEE Summer Topicals Meeting Series, SUM 2015 - Nassau, Bahamas Duration: Jul 13 2015 → Jul 15 2015

Publication series

Name	2015 IEEE Summer Topicals Meeting Series, SUM 2015

Conference

Conference	IEEE Summer Topicals Meeting Series, SUM 2015
Country/Territory	Bahamas
City	Nassau
Period	07/13/15 → 07/15/15

Access to Document

10.1109/PHOSST.2015.7248261

Cite this

Cho, M., Seo, J. H., Lee, J., Zhao, D., Zhou, W., & Ma, Z. (2015). High-reflection Si/SiO₂ Bragg reflector via membrane transfer printing. In 2015 IEEE Summer Topicals Meeting Series, SUM 2015 (pp. 193-195). Article 7248261 (2015 IEEE Summer Topicals Meeting Series, SUM 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2015.7248261

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title = "High-reflection Si/SiO2 Bragg reflector via membrane transfer printing",

abstract = "High reflection Si/SiO2 quarter-wavelength Distributed Bragg Reflector (DBR) is reported. The structure is composed of alternate single crystal Si and thermally-grown SiO2. Si Nanomembrane (Si NM) transfer and subsequent thermal oxidation achieves high reflection throughout the broad IR spectrum.",

author = "Minkyu Cho and Seo, \{Jung Hun\} and Jaeseong Lee and Deyin Zhao and Weidong Zhou and Zhenqiang Ma",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Summer Topicals Meeting Series, SUM 2015 ; Conference date: 13-07-2015 Through 15-07-2015",

year = "2015",

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doi = "10.1109/PHOSST.2015.7248261",

language = "English",

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Cho, M, Seo, JH, Lee, J, Zhao, D, Zhou, W & Ma, Z 2015, High-reflection Si/SiO₂ Bragg reflector via membrane transfer printing. in 2015 IEEE Summer Topicals Meeting Series, SUM 2015., 7248261, 2015 IEEE Summer Topicals Meeting Series, SUM 2015, Institute of Electrical and Electronics Engineers Inc., pp. 193-195, IEEE Summer Topicals Meeting Series, SUM 2015, Nassau, Bahamas, 07/13/15. https://doi.org/10.1109/PHOSST.2015.7248261

High-reflection Si/SiO₂ Bragg reflector via membrane transfer printing. / Cho, Minkyu; Seo, Jung Hun; Lee, Jaeseong et al.
2015 IEEE Summer Topicals Meeting Series, SUM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 193-195 7248261 (2015 IEEE Summer Topicals Meeting Series, SUM 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Zhou, Weidong

AU - Ma, Zhenqiang

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AB - High reflection Si/SiO2 quarter-wavelength Distributed Bragg Reflector (DBR) is reported. The structure is composed of alternate single crystal Si and thermally-grown SiO2. Si Nanomembrane (Si NM) transfer and subsequent thermal oxidation achieves high reflection throughout the broad IR spectrum.

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