High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

H. Y. Liu; David T. Childs; T. J. Badcock; K. M. Groom; Ian R. Sellers; M. Hopkinson; R. A. Hogg; Dave J. Robbins; D. J. Mowbray; M. S. Skolnick

doi:10.1109/LPT.2005.846948

High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

H. Y. Liu
, David T. Childs
, T. J. Badcock
, K. M. Groom
, Ian R. Sellers
, M. Hopkinson
, R. A. Hogg
, Dave J. Robbins
, D. J. Mowbray
, M. S. Skolnick

Department of Electrical Engineering

University of Sheffield
Bookham Technology plc

Research output: Contribution to journal › Article › peer-review

155 Scopus citations

Abstract

The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-μm multilayer InAs-GaAs quantum-dot lasers. A very low Continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm² are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm² for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets.

Original language	English
Pages (from-to)	1139-1141
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	6
DOIs	https://doi.org/10.1109/LPT.2005.846948
State	Published - Jun 2005

Keywords

Epitaxial growth
Quantum dots (QDs)
Semiconductor diodes
Semiconductor lasers

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Liu, H. Y., Childs, D. T., Badcock, T. J., Groom, K. M., Sellers, I. R., Hopkinson, M., Hogg, R. A., Robbins, D. J., Mowbray, D. J., & Skolnick, M. S. (2005). High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents. IEEE Photonics Technology Letters, 17(6), 1139-1141. https://doi.org/10.1109/LPT.2005.846948

@article{2086c8bc99e847a68766a9cac73bc872,

title = "High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents",

abstract = "The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-μm multilayer InAs-GaAs quantum-dot lasers. A very low Continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm2 are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm2 for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets.",

keywords = "Epitaxial growth, Quantum dots (QDs), Semiconductor diodes, Semiconductor lasers",

author = "Liu, \{H. Y.\} and Childs, \{David T.\} and Badcock, \{T. J.\} and Groom, \{K. M.\} and Sellers, \{Ian R.\} and M. Hopkinson and Hogg, \{R. A.\} and Robbins, \{Dave J.\} and Mowbray, \{D. J.\} and Skolnick, \{M. S.\}",

year = "2005",

month = jun,

doi = "10.1109/LPT.2005.846948",

language = "English",

volume = "17",

pages = "1139--1141",

journal = "IEEE Photonics Technology Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

AU - Liu, H. Y.

AU - Childs, David T.

AU - Badcock, T. J.

AU - Groom, K. M.

AU - Sellers, Ian R.

AU - Hopkinson, M.

AU - Hogg, R. A.

AU - Robbins, Dave J.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

PY - 2005/6

Y1 - 2005/6

N2 - The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-μm multilayer InAs-GaAs quantum-dot lasers. A very low Continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm2 are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm2 for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets.

AB - The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-μm multilayer InAs-GaAs quantum-dot lasers. A very low Continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm2 are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm2 for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets.

KW - Epitaxial growth

KW - Quantum dots (QDs)

KW - Semiconductor diodes

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/20544446361

U2 - 10.1109/LPT.2005.846948

DO - 10.1109/LPT.2005.846948

M3 - Article

AN - SCOPUS:20544446361

SN - 1041-1135

VL - 17

SP - 1139

EP - 1141

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 6

ER -

High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

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Keywords

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