High-performance 1,3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

H. Y. Liu; T. J. Badcock; K. M. Groom; M. Hopkinson; M. Gutiérrez; D. T. Childs; C. Jin; R. A. Hogg; I. R. Sellers; D. J. Mowbray; M. S. Skolnick; R. Beanland; D. J. Robbins

doi:10.1117/12.662499

High-performance 1,3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

H. Y. Liu
, T. J. Badcock
, K. M. Groom
, M. Hopkinson
, M. Gutiérrez
, D. T. Childs
, C. Jin
, R. A. Hogg
, I. R. Sellers
, D. J. Mowbray
, M. S. Skolnick
, R. Beanland
, D. J. Robbins

Department of Electrical Engineering

University of Sheffield
Bookham Technology plc

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

A high-growth-temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3-μm multilayer InAs/GaAs quantum-dot (QD) lasers. The high-growth-temperature spacer layer inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics and hence improved laser performance. The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR) coated facets has been utilized to further reduce the threshold current and threshold current density (J_th) for 1.3-μm InAs/GaAs QD lasers. Very low continuous-wave room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm² are achieved for a 3-layer device with a 1-mm long HR/HR cavity. For a 2-mm cavity the continuous-wave threshold current density is as low as 17 A/cm² at room temperature for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets. The high-growth-temperature spacer layers have only a relatively small effect on the temperature stability of the threshold current above room temperature. To further increase the characteristic temperature (T₀) of the QD lasers, 1.3-μm InAs/GaAs QD lasers incorporating p-type modulation doping have been grown and studied. A negative T₀ and J_th of 48 A/cm^-2 at room temperature have been obtained by combining the high-growth-temperature GaAs spacer layers with the p-type modulation doping of the QDs.

Original language	English
Title of host publication	Semiconductor Lasers and Laser Dynamics II
DOIs	https://doi.org/10.1117/12.662499
State	Published - 2006
Event	Semiconductor Lasers and Laser Dynamics II - Strasbourg, France Duration: Apr 3 2006 → Apr 6 2006

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6184
ISSN (Print)	0277-786X

Conference

Conference	Semiconductor Lasers and Laser Dynamics II
Country/Territory	France
City	Strasbourg
Period	04/3/06 → 04/6/06

Keywords

Characteristic Temperature
Molecular beam epitaxial growth
Quantum dots
Semiconductor lasers
Threshold current density

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10.1117/12.662499

Cite this

Liu, H. Y., Badcock, T. J., Groom, K. M., Hopkinson, M., Gutiérrez, M., Childs, D. T., Jin, C., Hogg, R. A., Sellers, I. R., Mowbray, D. J., Skolnick, M. S., Beanland, R., & Robbins, D. J. (2006). High-performance 1,3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature. In Semiconductor Lasers and Laser Dynamics II Article 618417 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6184). https://doi.org/10.1117/12.662499

@inproceedings{429e283b79ca475ea4701ca5f2446f07,

title = "High-performance 1,3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature",

abstract = "A high-growth-temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3-μm multilayer InAs/GaAs quantum-dot (QD) lasers. The high-growth-temperature spacer layer inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics and hence improved laser performance. The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR) coated facets has been utilized to further reduce the threshold current and threshold current density (Jth) for 1.3-μm InAs/GaAs QD lasers. Very low continuous-wave room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm2 are achieved for a 3-layer device with a 1-mm long HR/HR cavity. For a 2-mm cavity the continuous-wave threshold current density is as low as 17 A/cm2 at room temperature for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets. The high-growth-temperature spacer layers have only a relatively small effect on the temperature stability of the threshold current above room temperature. To further increase the characteristic temperature (T0) of the QD lasers, 1.3-μm InAs/GaAs QD lasers incorporating p-type modulation doping have been grown and studied. A negative T0 and Jth of 48 A/cm-2 at room temperature have been obtained by combining the high-growth-temperature GaAs spacer layers with the p-type modulation doping of the QDs.",

keywords = "Characteristic Temperature, Molecular beam epitaxial growth, Quantum dots, Semiconductor lasers, Threshold current density",

author = "Liu, \{H. Y.\} and Badcock, \{T. J.\} and Groom, \{K. M.\} and M. Hopkinson and M. Guti{\'e}rrez and Childs, \{D. T.\} and C. Jin and Hogg, \{R. A.\} and Sellers, \{I. R.\} and Mowbray, \{D. J.\} and Skolnick, \{M. S.\} and R. Beanland and Robbins, \{D. J.\}",

year = "2006",

doi = "10.1117/12.662499",

language = "English",

isbn = "0819462403",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Semiconductor Lasers and Laser Dynamics II",

note = "Semiconductor Lasers and Laser Dynamics II ; Conference date: 03-04-2006 Through 06-04-2006",

}

Liu, HY, Badcock, TJ, Groom, KM, Hopkinson, M, Gutiérrez, M, Childs, DT, Jin, C, Hogg, RA, Sellers, IR, Mowbray, DJ, Skolnick, MS, Beanland, R & Robbins, DJ 2006, High-performance 1,3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature. in Semiconductor Lasers and Laser Dynamics II., 618417, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6184, Semiconductor Lasers and Laser Dynamics II, Strasbourg, France, 04/3/06. https://doi.org/10.1117/12.662499

High-performance 1,3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature. / Liu, H. Y.; Badcock, T. J.; Groom, K. M. et al.
Semiconductor Lasers and Laser Dynamics II. 2006. 618417 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6184).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-performance 1,3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

AU - Liu, H. Y.

AU - Badcock, T. J.

AU - Groom, K. M.

AU - Hopkinson, M.

AU - Gutiérrez, M.

AU - Childs, D. T.

AU - Jin, C.

AU - Hogg, R. A.

AU - Sellers, I. R.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

AU - Beanland, R.

AU - Robbins, D. J.

PY - 2006

Y1 - 2006

N2 - A high-growth-temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3-μm multilayer InAs/GaAs quantum-dot (QD) lasers. The high-growth-temperature spacer layer inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics and hence improved laser performance. The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR) coated facets has been utilized to further reduce the threshold current and threshold current density (Jth) for 1.3-μm InAs/GaAs QD lasers. Very low continuous-wave room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm2 are achieved for a 3-layer device with a 1-mm long HR/HR cavity. For a 2-mm cavity the continuous-wave threshold current density is as low as 17 A/cm2 at room temperature for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets. The high-growth-temperature spacer layers have only a relatively small effect on the temperature stability of the threshold current above room temperature. To further increase the characteristic temperature (T0) of the QD lasers, 1.3-μm InAs/GaAs QD lasers incorporating p-type modulation doping have been grown and studied. A negative T0 and Jth of 48 A/cm-2 at room temperature have been obtained by combining the high-growth-temperature GaAs spacer layers with the p-type modulation doping of the QDs.

AB - A high-growth-temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3-μm multilayer InAs/GaAs quantum-dot (QD) lasers. The high-growth-temperature spacer layer inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics and hence improved laser performance. The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR) coated facets has been utilized to further reduce the threshold current and threshold current density (Jth) for 1.3-μm InAs/GaAs QD lasers. Very low continuous-wave room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm2 are achieved for a 3-layer device with a 1-mm long HR/HR cavity. For a 2-mm cavity the continuous-wave threshold current density is as low as 17 A/cm2 at room temperature for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets. The high-growth-temperature spacer layers have only a relatively small effect on the temperature stability of the threshold current above room temperature. To further increase the characteristic temperature (T0) of the QD lasers, 1.3-μm InAs/GaAs QD lasers incorporating p-type modulation doping have been grown and studied. A negative T0 and Jth of 48 A/cm-2 at room temperature have been obtained by combining the high-growth-temperature GaAs spacer layers with the p-type modulation doping of the QDs.

KW - Characteristic Temperature

KW - Molecular beam epitaxial growth

KW - Quantum dots

KW - Semiconductor lasers

KW - Threshold current density

UR - https://www.scopus.com/pages/publications/33746680512

U2 - 10.1117/12.662499

DO - 10.1117/12.662499

M3 - Conference contribution

AN - SCOPUS:33746680512

SN - 0819462403

SN - 9780819462404

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Semiconductor Lasers and Laser Dynamics II

T2 - Semiconductor Lasers and Laser Dynamics II

Y2 - 3 April 2006 through 6 April 2006

ER -

High-performance 1,3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

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Keywords

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