High-mobility InAs/AlSb heterostructures for spintronics applications

Yu G. Sadofyev; Y. Cao; S. Chaparro; A. Ramamoorthy; B. Naser; J. P. Bird; S. R. Johnson; Y. H. Zhang

doi:10.1117/12.510557

High-mobility InAs/AlSb heterostructures for spintronics applications

Yu G. Sadofyev
, Y. Cao
, S. Chaparro
, A. Ramamoorthy
, B. Naser
, J. P. Bird
, S. R. Johnson
, Y. H. Zhang

Department of Electrical Engineering

P.N. Lebedev Physical Institute of the Russian Academy of Sciences
Arizona State University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical Al and Al_0.8Ga_0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed.

Original language	English
Pages (from-to)	49-51
Number of pages	3
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5023
DOIs	https://doi.org/10.1117/12.510557
State	Published - 2003
Event	10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation Duration: Jun 17 2002 → Jun 21 2002

Keywords

g-factor enhancement
High mobility
InAs/AlSb
Quantum well
Spintronics

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10.1117/12.510557

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title = "High-mobility InAs/AlSb heterostructures for spintronics applications",

abstract = "High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical Al and Al0.8Ga0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed.",

keywords = "g-factor enhancement, High mobility, InAs/AlSb, Quantum well, Spintronics",

author = "Sadofyev, \{Yu G.\} and Y. Cao and S. Chaparro and A. Ramamoorthy and B. Naser and Bird, \{J. P.\} and Johnson, \{S. R.\} and Zhang, \{Y. H.\}",

year = "2003",

doi = "10.1117/12.510557",

language = "English",

volume = "5023",

pages = "49--51",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "10th International Symposium on Nanostructures: Physics and Technology ; Conference date: 17-06-2002 Through 21-06-2002",

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TY - JOUR

T1 - High-mobility InAs/AlSb heterostructures for spintronics applications

AU - Sadofyev, Yu G.

AU - Cao, Y.

AU - Chaparro, S.

AU - Ramamoorthy, A.

AU - Naser, B.

AU - Bird, J. P.

AU - Johnson, S. R.

AU - Zhang, Y. H.

PY - 2003

Y1 - 2003

N2 - High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical Al and Al0.8Ga0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed.

AB - High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical Al and Al0.8Ga0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed.

KW - g-factor enhancement

KW - High mobility

KW - InAs/AlSb

KW - Quantum well

KW - Spintronics

UR - https://www.scopus.com/pages/publications/0042878664

U2 - 10.1117/12.510557

DO - 10.1117/12.510557

M3 - Conference article

AN - SCOPUS:0042878664

SN - 0277-786X

VL - 5023

SP - 49

EP - 51

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - 10th International Symposium on Nanostructures: Physics and Technology

Y2 - 17 June 2002 through 21 June 2002

ER -

High-mobility InAs/AlSb heterostructures for spintronics applications

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Keywords

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