Abstract
Far-infrared magneto-transmission studies on two high mobility InAs/AlxGa1-xSb (x = 0.1 and 0.2) type-II single quantum wells in magnetic fields up to 30 T show that a magnetic-field-induced semimetal-semiconductor (SM-SC) transition occurs in the x = 0.2 sample between 8 and 12 T, and in the x = 0.1 sample in the vicinity of 28 T. The so-called X-lines vanish at high magnetic fields and temperatures, consistent with their assignment to internal transitions of stable, spatially separated excitons. A large splitting (∼ 30 cm-1) between cyclotron-resonance-like transitions for 13 T ≤ B ≤ 23 T for the x = 0.1 sample is attributed to enhanced spin splitting due to conduction-valence-band Landau-level mixing across the interface.
| Original language | English |
|---|---|
| Pages (from-to) | 927-931 |
| Number of pages | 5 |
| Journal | Physica B: Condensed Matter |
| Volume | 249-251 |
| DOIs | |
| State | Published - Jun 17 1998 |
Keywords
- Conduction-valence Landau-level mixing
- Excitons
- InAs/AlGaSb quantum wells
- Semimetal-to-semiconductor transition
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