High-efficiency short-cavity InGaAsP laser with one high-reflectivity mirror

T. P. Lee; C. A. Burrus; P. L. Liu; A. G. Dentai

doi:10.1049/el:19820547

High-efficiency short-cavity InGaAsP laser with one high-reflectivity mirror

T. P. Lee
, C. A. Burrus
, P. L. Liu
, A. G. Dentai

Department of Electrical Engineering

Nokia

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

High differential quantum efficiency (70%), high output power (5 mW), and stable single-frequency output at high (1 Gbit/s) modulation rates have been obtained experimentally using short-cavity InGaAsP injection lasers with a metallic mirror on one facet only.

Original language	English
Pages (from-to)	805-806
Number of pages	2
Journal	Electronics Letters
Volume	18
Issue number	19
DOIs	https://doi.org/10.1049/el:19820547
State	Published - Sep 16 1982

Keywords

Semiconductor devices and materials
Semiconductor lasers

Access to Document

10.1049/el:19820547

Cite this

@article{0e42083c2f2d4ab59974462032711fdc,

title = "High-efficiency short-cavity InGaAsP laser with one high-reflectivity mirror",

abstract = "High differential quantum efficiency (70\%), high output power (5 mW), and stable single-frequency output at high (1 Gbit/s) modulation rates have been obtained experimentally using short-cavity InGaAsP injection lasers with a metallic mirror on one facet only.",

keywords = "Semiconductor devices and materials, Semiconductor lasers",

author = "Lee, \{T. P.\} and Burrus, \{C. A.\} and Liu, \{P. L.\} and Dentai, \{A. G.\}",

year = "1982",

month = sep,

day = "16",

doi = "10.1049/el:19820547",

language = "English",

volume = "18",

pages = "805--806",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "19",

}

TY - JOUR

T1 - High-efficiency short-cavity InGaAsP laser with one high-reflectivity mirror

AU - Lee, T. P.

AU - Burrus, C. A.

AU - Liu, P. L.

AU - Dentai, A. G.

PY - 1982/9/16

Y1 - 1982/9/16

N2 - High differential quantum efficiency (70%), high output power (5 mW), and stable single-frequency output at high (1 Gbit/s) modulation rates have been obtained experimentally using short-cavity InGaAsP injection lasers with a metallic mirror on one facet only.

AB - High differential quantum efficiency (70%), high output power (5 mW), and stable single-frequency output at high (1 Gbit/s) modulation rates have been obtained experimentally using short-cavity InGaAsP injection lasers with a metallic mirror on one facet only.

KW - Semiconductor devices and materials

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/0020186110

U2 - 10.1049/el:19820547

DO - 10.1049/el:19820547

M3 - Article

AN - SCOPUS:0020186110

SN - 0013-5194

VL - 18

SP - 805

EP - 806

JO - Electronics Letters

JF - Electronics Letters

IS - 19

ER -

High-efficiency short-cavity InGaAsP laser with one high-reflectivity mirror

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this