High efficiency MIS/IL silicon solar cells with silicon oxynitride as ultra-thin tunneling films

Liu Xinming; Jia Quanxi; Liu Enke

doi:10.1016/0165-1633(88)90054-8

High efficiency MIS/IL silicon solar cells with silicon oxynitride as ultra-thin tunneling films

Liu Xinming
, Jia Quanxi
, Liu Enke

Department of Materials Design and Innovation

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

High efficiency MIS inversion layer (MIS/IL) silicon solar cells have been fabricated by using silicon oxynitride as ultra-thin tunneling film. The characteristics and the thermal stability of the cells are improved considerably when the tunneling film is formed directly under ammonia at low temperature and low pressure. Short circuit current density of 35.2 mA/cm² and conversion efficiency of 13.5% (AM 1.5, 100 mW/cm², 25° C) have been achieved with this method when single layer plasma silicon nitride is used as AR coating and CZ silicon as the substrate.

Original language	English
Pages (from-to)	257-263
Number of pages	7
Journal	Solar Energy Materials
Volume	17
Issue number	4
DOIs	https://doi.org/10.1016/0165-1633(88)90054-8
State	Published - Jun 1988

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title = "High efficiency MIS/IL silicon solar cells with silicon oxynitride as ultra-thin tunneling films",

abstract = "High efficiency MIS inversion layer (MIS/IL) silicon solar cells have been fabricated by using silicon oxynitride as ultra-thin tunneling film. The characteristics and the thermal stability of the cells are improved considerably when the tunneling film is formed directly under ammonia at low temperature and low pressure. Short circuit current density of 35.2 mA/cm2 and conversion efficiency of 13.5\% (AM 1.5, 100 mW/cm2, 25° C) have been achieved with this method when single layer plasma silicon nitride is used as AR coating and CZ silicon as the substrate.",

author = "Liu Xinming and Jia Quanxi and Liu Enke",

year = "1988",

month = jun,

doi = "10.1016/0165-1633(88)90054-8",

language = "English",

volume = "17",

pages = "257--263",

journal = "Solar Energy Materials",

issn = "0165-1633",

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TY - JOUR

T1 - High efficiency MIS/IL silicon solar cells with silicon oxynitride as ultra-thin tunneling films

AU - Xinming, Liu

AU - Quanxi, Jia

AU - Enke, Liu

PY - 1988/6

Y1 - 1988/6

N2 - High efficiency MIS inversion layer (MIS/IL) silicon solar cells have been fabricated by using silicon oxynitride as ultra-thin tunneling film. The characteristics and the thermal stability of the cells are improved considerably when the tunneling film is formed directly under ammonia at low temperature and low pressure. Short circuit current density of 35.2 mA/cm2 and conversion efficiency of 13.5% (AM 1.5, 100 mW/cm2, 25° C) have been achieved with this method when single layer plasma silicon nitride is used as AR coating and CZ silicon as the substrate.

AB - High efficiency MIS inversion layer (MIS/IL) silicon solar cells have been fabricated by using silicon oxynitride as ultra-thin tunneling film. The characteristics and the thermal stability of the cells are improved considerably when the tunneling film is formed directly under ammonia at low temperature and low pressure. Short circuit current density of 35.2 mA/cm2 and conversion efficiency of 13.5% (AM 1.5, 100 mW/cm2, 25° C) have been achieved with this method when single layer plasma silicon nitride is used as AR coating and CZ silicon as the substrate.

UR - https://www.scopus.com/pages/publications/0024030437

U2 - 10.1016/0165-1633(88)90054-8

DO - 10.1016/0165-1633(88)90054-8

M3 - Article

AN - SCOPUS:0024030437

SN - 0165-1633

VL - 17

SP - 257

EP - 263

JO - Solar Energy Materials

JF - Solar Energy Materials

IS - 4

ER -

High efficiency MIS/IL silicon solar cells with silicon oxynitride as ultra-thin tunneling films

Abstract

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