High-efficiency Cr-MIS solar cells on single and polycrystalline silicon

W. A. Anderson; A. E. Delahoy; J. K. Kim; S. H. Hyland; S. K. Dey

doi:10.1063/1.90470

High-efficiency Cr-MIS solar cells on single and polycrystalline silicon

W. A. Anderson
, A. E. Delahoy
, J. K. Kim
, S. H. Hyland
, S. K. Dey

Department of Electrical Engineering

Rutgers - The State University of New Jersey, New Brunswick

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Cr-MIS solar cells having a 2-cm² area have been fabricated to produce 12.2% efficiency on single crystal and 8.8% efficiency on polycrystalline Si. Surface-state data were used to predict open-circuit voltages of 0.60 and 0.50 V, respectively, for the single-crystal and polycrystalline Si. Spectral response measurements and Cr metal thickness confirm the differences in short-circuit current density using these two types of Si.

Original language	English
Pages (from-to)	588-590
Number of pages	3
Journal	Applied Physics Letters
Volume	33
Issue number	7
DOIs	https://doi.org/10.1063/1.90470
State	Published - 1978

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title = "High-efficiency Cr-MIS solar cells on single and polycrystalline silicon",

abstract = "Cr-MIS solar cells having a 2-cm2 area have been fabricated to produce 12.2\% efficiency on single crystal and 8.8\% efficiency on polycrystalline Si. Surface-state data were used to predict open-circuit voltages of 0.60 and 0.50 V, respectively, for the single-crystal and polycrystalline Si. Spectral response measurements and Cr metal thickness confirm the differences in short-circuit current density using these two types of Si.",

author = "Anderson, \{W. A.\} and Delahoy, \{A. E.\} and Kim, \{J. K.\} and Hyland, \{S. H.\} and Dey, \{S. K.\}",

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journal = "Applied Physics Letters",

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AU - Anderson, W. A.

AU - Delahoy, A. E.

AU - Kim, J. K.

AU - Hyland, S. H.

AU - Dey, S. K.

PY - 1978

Y1 - 1978

N2 - Cr-MIS solar cells having a 2-cm2 area have been fabricated to produce 12.2% efficiency on single crystal and 8.8% efficiency on polycrystalline Si. Surface-state data were used to predict open-circuit voltages of 0.60 and 0.50 V, respectively, for the single-crystal and polycrystalline Si. Spectral response measurements and Cr metal thickness confirm the differences in short-circuit current density using these two types of Si.

AB - Cr-MIS solar cells having a 2-cm2 area have been fabricated to produce 12.2% efficiency on single crystal and 8.8% efficiency on polycrystalline Si. Surface-state data were used to predict open-circuit voltages of 0.60 and 0.50 V, respectively, for the single-crystal and polycrystalline Si. Spectral response measurements and Cr metal thickness confirm the differences in short-circuit current density using these two types of Si.

UR - https://www.scopus.com/pages/publications/0039100877

U2 - 10.1063/1.90470

DO - 10.1063/1.90470

M3 - Article

AN - SCOPUS:0039100877

SN - 0003-6951

VL - 33

SP - 588

EP - 590

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

High-efficiency Cr-MIS solar cells on single and polycrystalline silicon

Abstract

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