Abstract
The stability of semiconductor epitaxial systems is discussed within a framework that clarifies connections between high pressure observations and 1 atm. growth conditions. Pressure-Raman results on interface mechanical stability in ZnSe/GaAs epilayers, and on phase stability in AlAs/GaAs superlattices are presented. In both cases the interface energetics play an important role. A theoretical analysis within a disordered interface picture offers insights into the occurence and prediction of metastable 1 atm. Heterostructures.
| Original language | English |
|---|---|
| Pages (from-to) | 107 |
| Number of pages | 1 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 32 |
| Issue number | S1 |
| DOIs | |
| State | Published - Jan 1993 |
Keywords
- Alas/Gaas
- Dislocations
- Phase transitions
- Pressure
- Raman
- Znse/Gaas
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