@inproceedings{e4c6515916824a4486cb3bc012c8221b,
title = "Heterostructure device on the cleaved edge of a superlattice for terahertz power generation",
abstract = "A novel device structure for terahertz power generation is proposed. The energy-wave vector dispersion relation ε(k) of electrons in this structure can be designed such that it contains sections of a negative effective mass within favorable ranges of energy ε and wave vector k. This design is based on the parallel electron transport in the combination of a quantum wall and a superlattice. The quantum well is grown on the cleaved edge of this superlattice and provides channel 1 with a low effective electron mass. Electrons in the superlattice as channel 2 have a large effective mass in the lowest quantization miniband of the superlattice. The effective thickness of the channel 2 can be controlled with the electric field from the p-n junction that is formed between n-type sheet doping concentration in the barrier layer of the quantum well and the p-type doping concentration in the superlattice. A simplified calculation scheme for obtaining the hybrid electron dispersion relation for the quantum real space transfer in such a two-channel combination is described and illustrated.",
author = "Gribnikov, \{Z. S.\} and Vagidov, \{N. Z.\} and H. Eisele and Mitin, \{V. V.\} and Haddad, \{G. I.\}",
note = "Publisher Copyright: {\textcopyright} 2001 ISDRS-Univ of Maryland.; International Semiconductor Device Research Symposium, ISDRS 2001 ; Conference date: 05-12-2001 Through 07-12-2001",
year = "2001",
doi = "10.1109/ISDRS.2001.984579",
language = "English",
series = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "559--562",
booktitle = "2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings",
address = "United States",
}